IDT71256S70DB datasheet, PDF - EEWORLD Datasheet

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IDT71256S70DB: DescriptionStandard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28; Categorystorage storage; File Size99KB，10 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71256S70DB Overview

Standard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28

IDT71256S70DB Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
length	37.211 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	5.08 mm
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.135 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20
width	15.24 mm
Base Number Matches	1

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CMOS Static RAM

256K (32K x 8-Bit)

Features

IDT71256S

IDT71256L

◆

High-speed address/chip select time

– Military: 25/35/45/55/70/85/100ns (max.)

– Commercial/Industrial: 20/25/35ns (max.) low power only

Low-power operation

Battery Backup operation – 2V data retention

Produced with advanced high-performance CMOS

technology

Input and output directly TTL-compatible

Available in standard 28-pin (300 or 600 mil) ceramic DIP,

28-pin (300 mil) SOJ

Military product compliant to MIL-STD-883, Class B

Description

Address access times as fast as 20ns are available with power

consumption of only 350mW (typ.). The circuit also offers a reduced power

standby mode. When

goes HIGH, the circuit will automatically go to and

remain in, a low-power standby mode as long as

remains HIGH. This

capability provides significant system level power and cooling savings.

The low-power (L) version also offers a battery backup data retention

capability where the circuit typically consumes only 5µW when operating

off a 2V battery.

The IDT71256 is packaged in a 28-pin (300 or 600 mil) ceramic DIP,

a 28-pin 300 mil SOJ providing high board level packing densities.

The IDT71256 military RAM is manufactured in compliance with the

latest revision of MIL-STD-883, Class B, making it ideally suited to military

temperature applications demanding the highest level of performance and

reliability.

The IDT 71256 is a 262,144-bit high-speed static RAM organized as

32K x 8. It is fabricated using high-performance, high-reliability CMOS

technology.

Functional Block Diagram

ADDRESS

DECODER

262,144 BIT

MEMORY ARRAY

GND

I/O

INPUT

DATA

CIRCUIT

I/O

I/O CONTROL

CONTROL

CIRCUIT

2946 drw 01

SEPTEMBER 2013

DSC-2946/13

IDT71256S70DB Related Products

	IDT71256S70DB	IDT71256S85DB	IDT71256S55TDB	IDT71256S70TDB
Description	Standard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28	Standard SRAM, 32KX8, 85ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28	Standard SRAM, 32KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Standard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	DIP	DIP
package instruction	DIP, DIP28,.6	DIP, DIP28,.6	DIP, DIP28,.6	DIP, DIP28,.6
Contacts	28	28	28	28
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	70 ns	85 ns	55 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28	R-GDIP-T28
JESD-609 code	e0	e0	e0	e0
length	37.211 mm	37.211 mm	37.1475 mm	37.1475 mm
memory density	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	32KX8	32KX8	32KX8	32KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.6	DIP28,.6	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	240
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B
Maximum seat height	5.08 mm	5.08 mm	5.08 mm	5.08 mm
Maximum standby current	0.02 A	0.02 A	0.02 A	0.02 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.135 mA	0.135 mA	0.135 mA	0.135 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	20	20	20	20
width	15.24 mm	15.24 mm	7.62 mm	7.62 mm
Maker	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

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