Standard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| Parts packaging code | DIP |
| package instruction | DIP, DIP28,.6 |
| Contacts | 28 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A001.A.2.C |
| Date Of Intro | 1988-01-01 |
| Maximum access time | 70 ns |
| I/O type | COMMON |
| JESD-30 code | R-GDIP-T28 |
| JESD-609 code | e0 |
| length | 37.1475 mm |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 28 |
| word count | 32768 words |
| character code | 32000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 32KX8 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B |
| Maximum seat height | 5.08 mm |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.135 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 20 |
| width | 7.62 mm |
| IDT71256S70TDB | IDT71256S70DB | IDT71256S85DB | IDT71256S55TDB | |
|---|---|---|---|---|
| Description | Standard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 | Standard SRAM, 32KX8, 70ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | Standard SRAM, 32KX8, 85ns, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | Standard SRAM, 32KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Parts packaging code | DIP | DIP | DIP | DIP |
| package instruction | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 |
| Contacts | 28 | 28 | 28 | 28 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN code | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| Maximum access time | 70 ns | 70 ns | 85 ns | 55 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| length | 37.1475 mm | 37.211 mm | 37.211 mm | 37.1475 mm |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 |
| word count | 32768 words | 32768 words | 32768 words | 32768 words |
| character code | 32000 | 32000 | 32000 | 32000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Exportable | YES | YES | YES | YES |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 | 225 | 225 | 225 |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Filter level | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B |
| Maximum seat height | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| Maximum standby current | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.135 mA | 0.135 mA | 0.135 mA | 0.135 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 20 | 20 | 20 | 20 |
| width | 7.62 mm | 15.24 mm | 15.24 mm | 7.62 mm |
| Maker | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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