DDR SRAM, 16MX9, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | GSI Technology |
Parts packaging code | BGA |
package instruction | LBGA, |
Contacts | 165 |
Reach Compliance Code | compliant |
ECCN code | 3A991.B.2.B |
Factory Lead Time | 12 weeks |
Maximum access time | 0.37 ns |
Other features | PIPELINED ARCHITECTURE |
JESD-30 code | R-PBGA-B165 |
JESD-609 code | e1 |
length | 17 mm |
memory density | 150994944 bit |
Memory IC Type | DDR SRAM |
memory width | 9 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of terminals | 165 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 16MX9 |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 |
Certification status | Not Qualified |
Maximum seat height | 1.5 mm |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 15 mm |
Base Number Matches | 1 |