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Q97301013

Description
RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size121KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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Q97301013 Overview

RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN

Q97301013 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionDISK BUTTON, O-CRDB-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)0.004 A
Collector-based maximum capacity0.24 pF
Collector-emitter maximum voltage8 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6500 MHz
Base Number Matches1

Q97301013 Related Products

Q97301013 Q97111419
Description RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN
Maker Infineon Infineon
package instruction DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Shell connection EMITTER EMITTER
Maximum collector current (IC) 0.004 A 0.004 A
Collector-based maximum capacity 0.24 pF 0.24 pF
Collector-emitter maximum voltage 8 V 8 V
Configuration SINGLE SINGLE
highest frequency band L BAND L BAND
JESD-30 code O-CRDB-F4 O-CRDB-F4
Number of components 1 1
Number of terminals 4 4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 6500 MHz 6500 MHz

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