Q97111419 datasheet, PDF - EEWORLD Datasheet

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Q97111419: DescriptionRF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size121KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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Q97111419 Overview

RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN

Q97111419 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	0.004 A
Collector-based maximum capacity	0.24 pF
Collector-emitter maximum voltage	8 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	O-CRDB-F4
Number of components	1
Number of terminals	4
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	ESA-SCC-5611/006
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	6500 MHz

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HiRel

NPN Silicon RF Transistor

Features

HiRel

Discrete and Microwave Semiconductor

¥ For low power amplifiers at collector currents from

0.2 to 2.5 mA

¥ Hermetically sealed microwave package

= 6.5 GHz,

= 2.6 dB at 2 GHz

qualified

¥ ESA/SCC Detail Spec. No.: 5611/006

BFY 180

Micro-X1

ESD: E

lectro

tatic

ischarge sensitive device, observe handling precautions!

Type

BFY 180 (ql)

Marking

Ordering Code

see below

H: High Rel Quality,

S: Space Quality,

Pin Configuration

Package

Micro-X1

(ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013

Ordering Code: on request

ES: ESA Space Quality, Ordering Code: Q97111419

(see

Chapter Order Instructions

for ordering example)

Table 1

Parameter

Collector-emitter voltage

Collector-emitter voltage,

= 0

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation,

176

Junction temperature

Operating temperature range

Storage temperature range

Thermal Resistance

Junction soldering point

Maximum Ratings

Symbol

Limit Values

0.5

200

65 É

200

65 É

200

< 805

Unit

K/W

CEO

CES

CBO

EBO

tot

stg

th JS

The maximum permissible base current for

FBE

measurements is 3 mA (spot-measurement duration < 1 s).

is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Draft A04 1998-04-01

Q97111419 Related Products

	Q97111419	Q97301013
Description	RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN
Maker	Infineon	Infineon
package instruction	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Shell connection	EMITTER	EMITTER
Maximum collector current (IC)	0.004 A	0.004 A
Collector-based maximum capacity	0.24 pF	0.24 pF
Collector-emitter maximum voltage	8 V	8 V
Configuration	SINGLE	SINGLE
highest frequency band	L BAND	L BAND
JESD-30 code	O-CRDB-F4	O-CRDB-F4
Number of components	1	1
Number of terminals	4	4
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	6500 MHz	6500 MHz

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