ARF448A datasheet, PDF - EEWORLD Datasheet

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ARF448A: DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size384KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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ARF448A Overview

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

ARF448A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-247AD
package instruction	TO-247, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (Abs) (ID)	15 A
Maximum drain current (ID)	15 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	13 dB
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Maximum off time (toff)	65 ns
Maximum opening time (tons)	25 ns
Base Number Matches	1

ARF448A Related Products

	ARF448A	ARF448B
Description	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	TO-247AD	TO-247AD
package instruction	TO-247, 3 PIN	TO-247, 3 PIN
Contacts	3	3
Reach Compliance Code	unknown	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	450 V	450 V
Maximum drain current (Abs) (ID)	15 A	15 A
Maximum drain current (ID)	15 A	15 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF	100 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-247	TO-247
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	13 dB	13 dB
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	65 ns	65 ns
Maximum opening time (tons)	25 ns	25 ns
Base Number Matches	1	1

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