RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Parts packaging code | TO-247AD |
| package instruction | TO-247, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Other features | HIGH RELIABILITY |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 450 V |
| Maximum drain current (Abs) (ID) | 15 A |
| Maximum drain current (ID) | 15 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 100 pF |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-247 |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 13 dB |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 65 ns |
| Maximum opening time (tons) | 25 ns |
| Base Number Matches | 1 |
| ARF448B | ARF448A | |
|---|---|---|
| Description | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible |
| Parts packaging code | TO-247AD | TO-247AD |
| package instruction | TO-247, 3 PIN | TO-247, 3 PIN |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY |
| Shell connection | SOURCE | SOURCE |
| Configuration | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 450 V | 450 V |
| Maximum drain current (Abs) (ID) | 15 A | 15 A |
| Maximum drain current (ID) | 15 A | 15 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 100 pF | 100 pF |
| highest frequency band | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-247 | TO-247 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Minimum operating temperature | -55 °C | -55 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Minimum power gain (Gp) | 13 dB | 13 dB |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON |
| Maximum off time (toff) | 65 ns | 65 ns |
| Maximum opening time (tons) | 25 ns | 25 ns |
| Base Number Matches | 1 | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD