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DISCRETE SEMICONDUCTORS
DATA SHEET
BCX71 series
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 20
2004 Feb 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V)
•
Low noise.
APPLICATIONS
•
Low level, low noise, low frequency applications in
hybrid circuits
•
General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
BCX71 series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PNP transistor in a plastic SOT23 package.
NPN complements: BCX70 series.
MARKING
TYPE NUMBER
BCX71H
BCX71J
BCX71K
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCX71H
BCX71J
BCX71K
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
BH*
BJ*
BK*
Top view
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Feb 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BCX71 series
MAX.
−45
−45
−5
−100
−200
−200
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Feb 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BCX71H
BCX71J
BCX71K
DC current gain
BCX71H
BCX71J
BCX71K
DC current gain
BCX71H
BCX71J
BCX71K
V
CEsat
V
BEsat
V
BE
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
I
C
=
−10
mA; I
B
=
−0.25
mA
I
C
=
−50
mA; I
B
=
−1.25
mA; note 1
I
C
=
−10
mA; I
B
=
−0.25
mA
I
C
=
−50
mA; I
B
=
−1.25
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10 μA;
V
CE
=
−5
V
I
C
=
−50
mA; V
CE
=
−1
V; note 1
C
c
C
e
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector capacitance
emitter capacitance
transition frequency
noise figure
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= I
c
= 0; V
EB
=
−0.5
V; f = 1 MHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
I
C
=
−50
mA; V
CE
=
−1
V; note 1
80
100
110
−60
−120
−600
−680
−600
−
−
−
−
−
I
C
=
−2
mA; V
CE
=
−5
V
180
250
380
CONDITIONS
I
E
= 0; V
CB
=
−45
V
I
E
= 0; V
CB
=
−45
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−10 μA;
V
CE
=
−5
V
30
40
100
MIN.
−
−
−
BCX71 series
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−650
−550
−720
4.5
11
−
2
MAX.
−20
−20
−20
−
−
−
310
460
630
−
−
−
−250
−550
−850
−750
−
−
−
−
−
6
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
−1
050 mV
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 100
2004 Feb 16
4
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