Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 30V, Silicon, Abrupt, DO-7,
Parameter Name | Attribute value |
package instruction | O-LALF-W2 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Other features | GOOD Q |
Minimum breakdown voltage | 30 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 10% |
Minimum diode capacitance ratio | 2.6 |
Nominal diode capacitance | 18 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
JEDEC-95 code | DO-7 |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.4 W |
Certification status | Not Qualified |
minimum quality factor | 350 |
Maximum repetitive peak reverse voltage | 30 V |
Maximum reverse current | 0.02 µA |
Reverse test voltage | 25 V |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Varactor Diode Classification | ABRUPT |
Base Number Matches | 1 |