INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2SB531
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·High
Power Dissipation-
: P
C
= 50W(Max)@T
C
=25℃
·Complement
to Type 2SD371
APPLICATIONS
·Designed
for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
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VALUE
UNIT
-100
V
-100
V
-5
V
-6
A
6
A
50
W
℃
150
I
E
Emitter Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature
-65~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= -0.1A; I
B
= 0
B
2SB531
MIN
-100
-5
TYP.
MAX
UNIT
V
V
I
E
= -10mA; I
C
= 0
I
C
= -4A; I
B
= -0.4A
B
-2.0
-1.5
-0.1
V
V
mA
mA
I
C
= -4A; V
CE
= -5V
V
CB
= -60V; I
E
= 0
V
EB
= -5V; I
C
= 0
I
C
= -1A; V
CE
= -5V
I
C
= -4A; V
CE
= -5V
Current-Gain—Bandwidth Product
h
FE
Classifications
R
40-80
O
70-140
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I
E
= 0; V
CB
= -10V; f= 1MHz
I
C
= -1A; V
CE
= -5V
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i
40
20
180
8
-0.1
240
pF
MHz
120-240
isc Website：www.iscsemi.cn
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