27C512TRPDI-12 datasheet, PDF - EEWORLD Datasheet

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27C512TRPDI-12: DescriptionOTP ROM, 64KX8, 120ns, CMOS, DIP-32; Categorystorage storage; File Size178KB，15 Pages; ManufacturerMaxwell Technologies Inc.

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27C512TRPDI-12 Overview

OTP ROM, 64KX8, 120ns, CMOS, DIP-32

27C512TRPDI-12 Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	120 ns
JESD-30 code	R-XDIP-T32
length	40.64 mm
memory density	524288 bit
Memory IC Type	OTP ROM
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX8
Package body material	UNSPECIFIED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	6.096 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
width	15.24 mm
Base Number Matches	1

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512K (64K x 8-Bit) OTP EPROM

A5-A9

x-Decoder

1024 x 1022

Memory Matrix

27C512T

A12-A16

I/O0

I/O15

Input

Data

Control

Y- Gating

Y - Decoder

PGM

A0-A4

A10-A11

: High Threshhold Inverter

Memory

Logic Diagram

EATURES

• 64K x 8-bit OTP EPROM organization

• R

-P

® radiation-hardened against natural space

radiation

• Total dose hardness:

- > 100 Krad (Si), depending upon space mission

• Excellent Single Event Effects:

-SEL

> 80 MeV/mg/cm2

-SEU

> 80 Mev/mg/cm2

• Package:

-32 pin R

-P

® flat pack

-32 pin R

-P

® DIP

• Fast access time:

- 120, 150, 200 ns (max)

• Low power dissipation:

- Active mode: 100 mW/MHz (typ)

- Standby mode: 10 µW (typ)

• High speed page and word programming:

-Page programming time: 14 sec (typ)

• Programming power supply:

- V

= 12.5 V + 0.3 V

• One-time programmable

• Pin arrangement

- JEDEC standard byte-wide EPROM

- Flash memory and mask ROM compatible

ESCRIPTION

Maxwell Technologies’ 27C512T high density 512-Kilobit one-

time programmable electrically programmable read only mem-

ory microcircuit features a greater than 100 krad (Si) total

dose tolerance, depending upon space mission. The 27C512T

features fast address times and low power dissipation. The

27C512T offers high speed programming using page pro-

gramming mode.

Maxwell Technologies' patented R

-P

® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R

-P

provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

1000570

12.19.01 Rev 2

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

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