MSS-60B53-B45 datasheet, PDF - EEWORLD Datasheet

MSS-60B53-B45: DescriptionSILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE, BEAM LEAD PACKAGE-4; CategoryDiscrete semiconductor diode; File Size119KB，2 Pages; ManufacturerCobham Semiconductor Solutions; Environmental Compliance

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MSS-60B53-B45 Overview

SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE, BEAM LEAD PACKAGE-4

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Cobham Semiconductor Solutions
package instruction	BEAM LEAD PACKAGE-4
Contacts	4
Reach Compliance Code	unknown
Other features	STATIC SENSITIVE, TIGHT DELTA MATCHING AVAILABLE
Minimum breakdown voltage	3 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	0.67 V
JESD-30 code	S-CQMW-F4
Humidity sensitivity level	NOT SPECIFIED
Number of components	4
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	4 V
surface mount	YES
Terminal form	FLAT
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Schottky barrier type	EXTRA HIGH BARRIER
Base Number Matches	1

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