IDT7188L35DB datasheet, PDF - EEWORLD Datasheet

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IDT7188L35DB: DescriptionStandard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22; Categorystorage storage; File Size69KB，7 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7188L35DB Overview

Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22

IDT7188L35DB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	0.300 INCH, CERAMIC, DIP-22
Contacts	22
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T22
JESD-609 code	e0
length	27.051 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	22
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	5.08 mm
Maximum standby current	0.0006 A
Minimum standby current	2 V
Maximum slew rate	0.115 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20
width	7.62 mm
Base Number Matches	1

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CMOS STATIC RAM

64K (16K x 4-BIT)

Integrated Device Technology, Inc.

IDT7188S

IDT7188L

FEATURES:

• High-speed (equal access and cycle times)

— Military: 25/35/45/55/70/85ns (max.)

• Low power consumption

• Battery backup operation — 2V data retention (L version

only)

• Available in high-density industry standard 22-pin, 300

mil ceramic DIP

• Produced with advanced CMOS technology

• Inputs/outputs TTL-compatible

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT7188 is a 65,536-bit high-speed static RAM

organized as 16K x 4. It is fabricated using IDT’s high-

performance, high-reliability technology — CMOS. This state-

of-the-art technology, combined with innovative circuit design

techniques, provides a cost effective approach for memory

intensive applications.

Access times as fast as 25ns are available. The IDT7188

offers a reduced power standby mode, I

SB1

, which is activated

when

goes HIGH. This capability significantly decreases

power while enhancing system reliability. The low-power

version (L) version also offers a battery backup data retention

capability where the circuit typically consumes only 30µW

operating from a 2V battery.

All inputs and outputs are TTL-compatible and operate

from a single 5V supply. The IDT7188 is packaged in 22-pin,

300 mil ceramic DIP providing excellent board-level packing

densities.

Military grade product is manufactured in compliance with

the latest revision of MIL-STD-883, Class B, making it ideally

suited to military temperature applications demanding the

highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

GND

65,536-BIT

MEMORY ARRAY

DECODER

I/O

COLUMN I/O

INPUT

DATA

CONTROL

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

2989 drw 01

MILITARY TEMPERATURE RANGE

Integrated Device Technology, Inc.

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

AUGUST 1996

6.3

DSC-2989/7

IDT7188L35DB Related Products

	IDT7188L35DB	IDT7188S70DB	IDT7188S45DB	IDT7188S55DB	IDT7188L55DB
Description	Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	DIP	DIP	DIP
package instruction	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	DIP, DIP22,.3	DIP, DIP22,.3	DIP, DIP22,.3
Contacts	22	22	22	22	22
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)
Maximum access time	35 ns	70 ns	-	55 ns	55 ns
I/O type	COMMON	COMMON	-	COMMON	COMMON
JESD-30 code	R-GDIP-T22	R-GDIP-T22	-	R-GDIP-T22	R-GDIP-T22
JESD-609 code	e0	e0	-	e0	e0
length	27.051 mm	27.051 mm	-	27.051 mm	27.051 mm
memory density	65536 bit	65536 bit	-	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM
memory width	4	4	-	4	4
Number of functions	1	1	-	1	1
Number of ports	1	1	-	1	1
Number of terminals	22	22	-	22	22
word count	16384 words	16384 words	-	16384 words	16384 words
character code	16000	16000	-	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	-	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C	-55 °C
organize	16KX4	16KX4	-	16KX4	16KX4
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE
Exportable	NO	NO	-	NO	NO
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	-	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	-	DIP	DIP
Encapsulate equivalent code	DIP22,.3	DIP22,.3	-	DIP22,.3	DIP22,.3
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	-	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	-	225	225
power supply	5 V	5 V	-	5 V	5 V
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Filter level	MIL-STD-883 Class B	MIL-STD-883 Class B	-	MIL-STD-883 Class B	MIL-STD-883 Class B
Maximum seat height	5.08 mm	5.08 mm	-	5.08 mm	5.08 mm
Maximum standby current	0.0006 A	0.02 A	-	0.02 A	0.0006 A
Minimum standby current	2 V	4.5 V	-	4.5 V	2 V
Maximum slew rate	0.115 mA	0.14 mA	-	0.14 mA	0.11 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	-	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	-	5 V	5 V
surface mount	NO	NO	-	NO	NO
technology	CMOS	CMOS	-	CMOS	CMOS
Temperature level	MILITARY	MILITARY	-	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	-	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	-	DUAL	DUAL
Maximum time at peak reflow temperature	20	20	-	20	20
width	7.62 mm	7.62 mm	-	7.62 mm	7.62 mm
Base Number Matches	1	1	1	1	-

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