IDT7188L55DB datasheet, PDF - EEWORLD Datasheet

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IDT7188L55DB: DescriptionStandard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22; Categorystorage storage; File Size69KB，7 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7188L55DB Overview

Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22

IDT7188L55DB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	DIP, DIP22,.3
Contacts	22
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T22
JESD-609 code	e0
length	27.051 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	22
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	5.08 mm
Maximum standby current	0.0006 A
Minimum standby current	2 V
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20
width	7.62 mm

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CMOS STATIC RAM

64K (16K x 4-BIT)

Integrated Device Technology, Inc.

IDT7188S

IDT7188L

FEATURES:

• High-speed (equal access and cycle times)

— Military: 25/35/45/55/70/85ns (max.)

• Low power consumption

• Battery backup operation — 2V data retention (L version

only)

• Available in high-density industry standard 22-pin, 300

mil ceramic DIP

• Produced with advanced CMOS technology

• Inputs/outputs TTL-compatible

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT7188 is a 65,536-bit high-speed static RAM

organized as 16K x 4. It is fabricated using IDT’s high-

performance, high-reliability technology — CMOS. This state-

of-the-art technology, combined with innovative circuit design

techniques, provides a cost effective approach for memory

intensive applications.

Access times as fast as 25ns are available. The IDT7188

offers a reduced power standby mode, I

SB1

, which is activated

when

goes HIGH. This capability significantly decreases

power while enhancing system reliability. The low-power

version (L) version also offers a battery backup data retention

capability where the circuit typically consumes only 30µW

operating from a 2V battery.

All inputs and outputs are TTL-compatible and operate

from a single 5V supply. The IDT7188 is packaged in 22-pin,

300 mil ceramic DIP providing excellent board-level packing

densities.

Military grade product is manufactured in compliance with

the latest revision of MIL-STD-883, Class B, making it ideally

suited to military temperature applications demanding the

highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

GND

65,536-BIT

MEMORY ARRAY

DECODER

I/O

COLUMN I/O

INPUT

DATA

CONTROL

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

2989 drw 01

MILITARY TEMPERATURE RANGE

Integrated Device Technology, Inc.

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

AUGUST 1996

6.3

DSC-2989/7

IDT7188L55DB Related Products

	IDT7188L55DB	IDT7188L35DB	IDT7188S70DB	IDT7188S45DB	IDT7188S55DB
Description	Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22	Standard SRAM, 16KX4, 55ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	DIP	DIP	DIP
package instruction	DIP, DIP22,.3	0.300 INCH, CERAMIC, DIP-22	0.300 INCH, CERAMIC, DIP-22	DIP, DIP22,.3	DIP, DIP22,.3
Contacts	22	22	22	22	22
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-
Maximum access time	55 ns	35 ns	70 ns	-	55 ns
I/O type	COMMON	COMMON	COMMON	-	COMMON
JESD-30 code	R-GDIP-T22	R-GDIP-T22	R-GDIP-T22	-	R-GDIP-T22
JESD-609 code	e0	e0	e0	-	e0
length	27.051 mm	27.051 mm	27.051 mm	-	27.051 mm
memory density	65536 bit	65536 bit	65536 bit	-	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM
memory width	4	4	4	-	4
Number of functions	1	1	1	-	1
Number of ports	1	1	1	-	1
Number of terminals	22	22	22	-	22
word count	16384 words	16384 words	16384 words	-	16384 words
character code	16000	16000	16000	-	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	-	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-55 °C
organize	16KX4	16KX4	16KX4	-	16KX4
Output characteristics	3-STATE	3-STATE	3-STATE	-	3-STATE
Exportable	NO	NO	NO	-	NO
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	-	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	-	DIP
Encapsulate equivalent code	DIP22,.3	DIP22,.3	DIP22,.3	-	DIP22,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	-	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	-	225
power supply	5 V	5 V	5 V	-	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Filter level	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B	-	MIL-STD-883 Class B
Maximum seat height	5.08 mm	5.08 mm	5.08 mm	-	5.08 mm
Maximum standby current	0.0006 A	0.0006 A	0.02 A	-	0.02 A
Minimum standby current	2 V	2 V	4.5 V	-	4.5 V
Maximum slew rate	0.11 mA	0.115 mA	0.14 mA	-	0.14 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	-	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	-	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	-	5 V
surface mount	NO	NO	NO	-	NO
technology	CMOS	CMOS	CMOS	-	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	-	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	-	2.54 mm
Terminal location	DUAL	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	20	20	20	-	20
width	7.62 mm	7.62 mm	7.62 mm	-	7.62 mm
Base Number Matches	-	1	1	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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