SMBG170CA datasheet, PDF - EEWORLD Datasheet

SMBG170CA: Description600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA; CategoryDiscrete semiconductor diode; File Size177KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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SMBG170CA Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-215AA
package instruction	PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Date Of I	1991-01-01
Maximum breakdown voltage	209 V
Minimum breakdown voltage	189 V
Breakdown voltage nominal value	199 V
Maximum clamping voltage	275 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-215AA
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	170 V
Maximum reverse current	5 µA
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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