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Datasheet> All Categories > semiconductor> Discrete semiconductor> BR2504W-G
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BR2504W-G

Description
Bridge Rectifiers DIODE RECT BRIDGE 25A 400V
Categorysemiconductor    Discrete semiconductor   
File Size152KB，2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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BR2504W-G Overview

Bridge Rectifiers DIODE RECT BRIDGE 25A 400V

BR2504W-G Parametric

Parameter NameAttribute value
Product CategoryBridge Rectifiers
ManufacturerComchip Technology
RoHSDetails
PackagingTray
ProductBridge Rectifiers
Factory Pack Quantity500

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Silicon Bridge Rectifiers
BR10/15/25/35/50A W -G SERIES
"-G" : RoHS Device
REVERSE VOLTAGE
- 50
to
1000V
FORWARD CURRENT
- 10/15/25/35/50A
BRW
METAL HEAT SINK
.442(11.23)
.424(10.77)
FEATURES
- Surge
overload -240~500 amperes peak
-
Low forward voltage drop
-
Mounting position: Any
-
Electrically isolated base -2000 Volts
-
Solderable 0.25" FASTON terminals
-
Materials used carries U/L recognition
1.200
(30.5)MIN
.042(1.07)
.038(0.97)
Hole for
No.8 screw
193"(4.9)diam
1.133(28.8)
1.114(28.3)
1.133(28.8)
1.114(28.3)
.732(18.6)
.693(17.6)
.469(11.9)
.429(10.9)
.732(18.6)
.693(17.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Resistive or inductive load 60H
Z
.
For capacitive load current by 20%
BR-W
10005
BR-W
1001
1501
2501
3501
5001
100
70
10
BR-W
10
240
BR-W
15
BR-W
1002
1502
2502
3502
5002
200
140
15
300
BR-W
25
BR-W
1004
1504
2504
3504
5004
400
280
25
400
BR-W
35
BR-W
1006
1506
2506
3506
5006
600
420
BR-W
1008
1508
2508
3508
5008
800
560
35
400
BR-W
50
BR-W
1010
1510
2510
3510
5010
1000
700
50
500
V
V
A
UNIT
CHARACTERISTICS
SYMBOL
15005
25005
35005
50005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum Average Forward
Rectified Output Current at
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load
Maximum Forward Voltage Drop
Per Element at 5.0/7.5/12.5/17.5/25.0A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage Per Element
Operating Temperature Rang
Storage Temperature Rang
@T
A
=25℃
@Tc=55℃
V
RRM
V
RMS
I
(AV)
50
35
I
FSM
A
V
F
I
R
T
J
T
STG
1.1
10.0
-55 to +125
-55 to +125
V
μA
℃
℃
MDS0912003A
Page 1

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