BR93L86RF-WE2 datasheet, PDF - EEWORLD Datasheet

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BR93L86RF-WE2: DescriptionEEPROM SRL 16K BIT; Categorystorage storage; File Size1MB，39 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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BR93L86RF-WE2 Overview

EEPROM SRL 16K BIT

BR93L86RF-WE2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SOIC
package instruction	LEAD FREE, SOP-8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum clock frequency (fCLK)	2 MHz
Data retention time - minimum	40
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDSO-G8
JESD-609 code	e2
length	5 mm
memory density	16384 bit
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	1024 words
character code	1000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1KX16
Package body material	PLASTIC/EPOXY
encapsulated code	LSOP
Encapsulate equivalent code	SOP8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, LOW PROFILE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	2/5 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Serial bus type	MICROWIRE
Maximum standby current	0.000002 A
Maximum slew rate	0.0015 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN COPPER
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	10
width	4.4 mm
Maximum write cycle time (tWC)	5 ms
write protect	SOFTWARE

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Datasheet

Serial EEPROM Series Standard EEPROM

Microwire BUS EEPROM(3-Wire)

BR93Lxx-W

●General

Description

BR93Lxx-W is serial EEPROM of serial 3-line interface method

●Features

3-line communications of chip select, serial clock, serial data

input / output (the case where input and output are shared)

Actions available at high speed 2MHz clock(2.5V to 5.5V)

Speed write available (write time 5ms max.）

Same package and pin layout from 1Kbit to 16Kbit

1.8V to 5.5V single power source action

Address auto increment function at read action

Write mistake prevention function

Write prohibition at power on

Write prohibition by command code

Write mistake prevention function at low voltage

Program cycle auto delete and auto end function

Program condition display by READY / BUSY

Low current consumption

At write action (at 5V) : 1.2mA (Typ.)

At read action (at 5V) : 0.3mA (Typ.)

At standby action (at 5V) : 0.1μA (Typ.)(CMOS input)

TTL compatible( input / outputs)

Data retention for 40 years

Endurance up to 1,000,000 times

Data at shipment all addresses FFFFh

●Packages

W(Typ.) x D(Typ.) x H(Max.)

SOP8

5.00mm x 6.20mm x 1.71mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

SOP- J8

4.90mm x 6.00mm x 1.65mm

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

SSOP-B8

3.00mm x 6.40mm x 1.35mm

MSOP8

2.90mm x 4.00mm x 0.90mm

DIP-T8

9.30mm x 6.50mm x 7.10mm

●BR93Lxx-W

Package type

Capacity

1Kbit

2Kbit

4Kbit

8Kbit

16Kbit

Bit format

64×16

128×16

256×16

512×16

1K×16

Type

BR93L46-W

BR93L56-W

BR93L66-W

BR93L76-W

BR93L86-W

Power source

voltage

1.8V to 5.5V

SOP8

●

Figure.1

SOP-J8 SSOP-B8 TSSOP-B8

FJ RFJ FV RFV FVT RFVT

●

MSOP8

RFVM

●

TSSOP-

B8J

RFVJ

●

DIP-T8

●

○Product

structure：Silicon monolithic integrated circuit

www.rohm.com

TSZ22111½14½001

○This

product is not designed protection against radioactive rays

1/35

TSZ02201-0R2R0G100390-1-2

15.Oct.2013 Rev.002

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