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BSS159N-L6327

Description
MOSFET N-Ch 60V 230mA SOT-23-3
CategoryDiscrete semiconductor    The transistor   
File Size195KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS159N-L6327 Overview

MOSFET N-Ch 60V 230mA SOT-23-3

BSS159N-L6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codeunknown

BSS159N-L6327 Related Products

BSS159N-L6327 BSS159NH6327XT BSS159N-H6906
Description MOSFET N-Ch 60V 230mA SOT-23-3 MOSFET N-Ch 60V 230mA SOT-23-3 Bipolar Transistors - BJT 600mA 60V PNP
Product Category - MOSFET MOSFET
Manufacturer - Infineon Infineon
RoHS - Details Details
Technology - Si Si
Mounting Style - SMD/SMT SMD/SMT
Package / Case - SOT-23-3 SOT-23-3
Number of Channels - 1 Channel 1 Channel
Transistor Polarity - N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage - 60 V 60 V
Id - Continuous Drain Current - 230 mA 230 mA
Rds On - Drain-Source Resistance - 1.7 Ohms 1.7 Ohms
Vgs th - Gate-Source Threshold Voltage - - 3.5 V - 3.5 V
Vgs - Gate-Source Voltage - 20 V 20 V
Qg - Gate Charge - 1.4 nC 1.4 nC
Minimum Operating Temperature - - 55 C - 55 C
Maximum Operating Temperature - + 150 C + 150 C
Configuration - Single Single
Qualification - AEC-Q100 AEC-Q100
Channel Mode - Depletion Depletion
Packaging - Cut Tape Cut Tape
Fall Time - 9 ns 9 ns
Forward Transconductance - Min - 100 mS 100 mS
Height - 1.1 mm 1.1 mm
Length - 2.9 mm 2.9 mm
Pd - Power Dissipation - 360 mW 360 mW
Product - MOSFET Small Signal MOSFET Small Signal
Rise Time - 2.9 ns 2.9 ns
Factory Pack Quantity - 3000 3000
Transistor Type - 1 N-Channel 1 N-Channel
Typical Turn-Off Delay Time - 9 ns 9 ns
Typical Turn-On Delay Time - 3.1 ns 3.1 ns
Width - 1.3 mm 1.3 mm
Unit Weight - 0.000282 oz 0.000282 oz

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