|
BSS159N-L6327 |
BSS159NH6327XT |
BSS159N-H6906 |
Description |
MOSFET N-Ch 60V 230mA SOT-23-3 |
MOSFET N-Ch 60V 230mA SOT-23-3 |
Bipolar Transistors - BJT 600mA 60V PNP |
Product Category |
- |
MOSFET |
MOSFET |
Manufacturer |
- |
Infineon |
Infineon |
RoHS |
- |
Details |
Details |
Technology |
- |
Si |
Si |
Mounting Style |
- |
SMD/SMT |
SMD/SMT |
Package / Case |
- |
SOT-23-3 |
SOT-23-3 |
Number of Channels |
- |
1 Channel |
1 Channel |
Transistor Polarity |
- |
N-Channel |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
- |
60 V |
60 V |
Id - Continuous Drain Current |
- |
230 mA |
230 mA |
Rds On - Drain-Source Resistance |
- |
1.7 Ohms |
1.7 Ohms |
Vgs th - Gate-Source Threshold Voltage |
- |
- 3.5 V |
- 3.5 V |
Vgs - Gate-Source Voltage |
- |
20 V |
20 V |
Qg - Gate Charge |
- |
1.4 nC |
1.4 nC |
Minimum Operating Temperature |
- |
- 55 C |
- 55 C |
Maximum Operating Temperature |
- |
+ 150 C |
+ 150 C |
Configuration |
- |
Single |
Single |
Qualification |
- |
AEC-Q100 |
AEC-Q100 |
Channel Mode |
- |
Depletion |
Depletion |
Packaging |
- |
Cut Tape |
Cut Tape |
Fall Time |
- |
9 ns |
9 ns |
Forward Transconductance - Min |
- |
100 mS |
100 mS |
Height |
- |
1.1 mm |
1.1 mm |
Length |
- |
2.9 mm |
2.9 mm |
Pd - Power Dissipation |
- |
360 mW |
360 mW |
Product |
- |
MOSFET Small Signal |
MOSFET Small Signal |
Rise Time |
- |
2.9 ns |
2.9 ns |
Factory Pack Quantity |
- |
3000 |
3000 |
Transistor Type |
- |
1 N-Channel |
1 N-Channel |
Typical Turn-Off Delay Time |
- |
9 ns |
9 ns |
Typical Turn-On Delay Time |
- |
3.1 ns |
3.1 ns |
Width |
- |
1.3 mm |
1.3 mm |
Unit Weight |
- |
0.000282 oz |
0.000282 oz |