BSS159N-H6906 datasheet, PDF - EEWORLD Datasheet

BSS159N-H6906: DescriptionBipolar Transistors - BJT 600mA 60V PNP; Categorysemiconductor Discrete semiconductor; File Size195KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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Bipolar Transistors - BJT 600mA 60V PNP

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Infineon
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	230 mA
Rds On - Drain-Source Resistance	1.7 Ohms
Vgs th - Gate-Source Threshold Voltage	- 3.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	1.4 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Qualification	AEC-Q100
Channel Mode	Depletion
Packaging	Reel
Packaging	MouseReel
Packaging	Cut Tape
Fall Time	9 ns
Forward Transconductance - Min	100 mS
Height	1.1 mm
Length	2.9 mm
Pd - Power Dissipation	360 mW
Product	MOSFET Small Signal
Rise Time	2.9 ns
Factory Pack Quantity	3000
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	9 ns
Typical Turn-On Delay Time	3.1 ns
Width	1.3 mm
Unit Weight	0.000282 oz

	BSS159N-H6906	BSS159N-L6327	BSS159NH6327XT
Description	Bipolar Transistors - BJT 600mA 60V PNP	MOSFET N-Ch 60V 230mA SOT-23-3	MOSFET N-Ch 60V 230mA SOT-23-3
Product Category	MOSFET	-	MOSFET
Manufacturer	Infineon	-	Infineon
RoHS	Details	-	Details
Technology	Si	-	Si
Mounting Style	SMD/SMT	-	SMD/SMT
Package / Case	SOT-23-3	-	SOT-23-3
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V	-	60 V
Id - Continuous Drain Current	230 mA	-	230 mA
Rds On - Drain-Source Resistance	1.7 Ohms	-	1.7 Ohms
Vgs th - Gate-Source Threshold Voltage	- 3.5 V	-	- 3.5 V
Vgs - Gate-Source Voltage	20 V	-	20 V
Qg - Gate Charge	1.4 nC	-	1.4 nC
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Configuration	Single	-	Single
Qualification	AEC-Q100	-	AEC-Q100
Channel Mode	Depletion	-	Depletion
Packaging	Cut Tape	-	Cut Tape
Fall Time	9 ns	-	9 ns
Forward Transconductance - Min	100 mS	-	100 mS
Height	1.1 mm	-	1.1 mm
Length	2.9 mm	-	2.9 mm
Pd - Power Dissipation	360 mW	-	360 mW
Product	MOSFET Small Signal	-	MOSFET Small Signal
Rise Time	2.9 ns	-	2.9 ns
Factory Pack Quantity	3000	-	3000
Transistor Type	1 N-Channel	-	1 N-Channel
Typical Turn-Off Delay Time	9 ns	-	9 ns
Typical Turn-On Delay Time	3.1 ns	-	3.1 ns
Width	1.3 mm	-	1.3 mm
Unit Weight	0.000282 oz	-	0.000282 oz

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