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IRF9910PBF

Description
USB Interface IC USB to UART Bdg Chip
CategoryDiscrete semiconductor    The transistor   
File Size293KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRF9910PBF Overview

USB Interface IC USB to UART Bdg Chip

IRF9910PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)26 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.0093 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)98 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95728A
IRF9910PbF
Applications
l
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l
Lead-Free
HEXFET
®
Power MOSFET
V
DSS
20V
Q1 13.4m
:
@V
GS
= 10V
Q2 9.3m
:
@V
GS
= 10V
R
DS(on)
max
I
D
10A
12A
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating


6


*


6


*

'


'


'


'

SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
10
8.3
83
2.0
1.3
0.016
-55 to + 150
W/°C
°C
Q1 Max.
20
± 20
Q2 Max.
Units
V
12
9.9
98
W
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
fg
Notes

through
…
are on page 10
www.irf.com
1
07/23/08
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