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RN2969FSTPL3

Description
Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 47K x 22Kohms
Categorysemiconductor    Discrete semiconductor   
File Size123KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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Bipolar Transistors - Pre-Biased -50mA -20volts 6Pin 47K x 22Kohms

RN2969FSTPL3 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerToshiba Semiconductor
RoHSDetails
ConfigurationDual
Transistor PolarityPNP
Typical Input Resistor47 kOhms
Typical Resistor Ratio2.14
Mounting StyleSMD/SMT
Package / CasefS-6
DC Collector/Base Gain hfe Min100
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current- 50 mA
Peak DC Collector Current50 mA
Pd - Power Dissipation50 mW
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
DC Current Gain hFE Max100
Height0.48 mm
Length1 mm
Factory Pack Quantity10000
Width0.8 mm
RN2967FS~RN2969FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2967FS,RN2968FS,RN2969FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
Unit: mm
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
0.7±0.05
package.
1
2
3
6
5
4
0.1±0.05
Complementary to RN1967FS~RN1969FS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2967FS
RN2968FS
R2
RN2969FS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
fS6
JEDEC
JEITA
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
2-1F1C
TOSHIBA
Weight: 0.001 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Equivalent Circuit
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2967FS~
RN2969FS
RN2967FS
Emitter-base voltage
RN2968FS
RN2969FS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2967FS~
RN2969FS
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−20
−20
−6
−7
−15
−50
50
150
−55~150
mA
mW
°C
°C
1
2
3
V
Q1
Q2
Unit
V
V
6
5
4
(top view)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
0.15±0.05
Two devices are incorporated into a fine pitch Small Mold (6 pin)
0.1±0.05
0.8±0.05
0.1±0.05
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