gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
•
–3.8 A, –20 V, R
DS(ON)
= 0.043
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.070
Ω
@ V
GS
= –2.5 V
•
Extended V
GSS
range (±12V) for battery applications
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–
20
±12
(Note 1)
Units
V
V
A
W
°C
–
3.8
–
30
1.0
0.6
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
–
55 to +150
125
208
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
°C/W
Package Marking and Ordering Information
Device Marking
2504P
2002
Fairchild Semiconductor Corporation
Device
FDW2504P
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
FDW2504P Rev. E (W)
FDW2504P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–16
–1
–100
100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –3.8 A
V
GS
= –2.5 V, I
D
= –3.0 A
V
GS
= –4.5 V, I
D
= –3.8 A, T
J
=125°C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3.8 A
–0.6
–1.0
3
0.036
0.056
0.049
–1.5
V
mV/°C
0.043
0.070
0.069
Ω
I
D(on)
g
FS
–15
13.2
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
1030
280
120
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
11
18
34
34
20
32
55
55
16
ns
ns
ns
ns
nC
nC
nC
V
DS
= –5 V,
V
GS
= –4.5 V
I
D
= –3.8 A,
9.7
2.2
2.4
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –0.83 A
(Note 2)
–0.83
–0.7
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 125 °C/W (steady state) when mounted on 1 inch² copper pad on FR-4.
b) R
θJA
is 208 °C/W (steady state) when mounted on minimum copper pad on FR-4.
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