GaAs MMICs
GN8061
GN8061
GaAs IC
For semiconductor laser drive
s
Features
q
q
q
1
2
3
4
6.4±0.2
8
7
6
5
Unit : mm
High output
Pulse current and DC bias current can be controlled.
10max.
2.54±0.25
High-speed switching
0.7min.
4.5max. 4.0max.
s
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Power supply voltage
Symbol
V
DD
V
SS
V
Ib1* 1
V
Ib2
Pin voltage
V
IN
V
Ip * 5
V
OUT* 1
Power current
Output current
Allowable power dissipation
Channel temperature
Storage temperature
Operating ambient temperature
*1
*2
*3
*4
*5
Rating
6
–6
6
0.5
– 0.5 to V
DD
–1.5
1.5 to 6
6
55
40
225
700
150
– 55 to +150
–10 to + 75
Unit
V
V
0 to 15˚
7.62±0.2
V
V
V
V
V
mA
mA
mA
mW
˚C
˚C
˚C
1 : GND
2 : V
Ib1
3 : V
Ib2
0.35max.
4 : OUT
5 : V
IP
6 : V
DD
7 : V
IN
8 : V
SS
8-Lead Plastic DIL Package
I
DD* 4
I
SS
I
OUT
P
D
*2
T
ch
T
stg
T
opr* 3
Do not apply the voltage higher than the set V
DD
.
Guaranteed for the unit in the natural atmosphere.
IC circuit functioning range. Note however that the electrical characteristics shown
at Ta= 25˚C is not guaranteed.
I
DD
is a current when the pulse output current and bias output current are zero.
Voltage when the constant current source has been connected.
s
Electrical Characteristics
(Ta = 25˚C)
Parameter
Pulse output current
Symbol
I
pmax.
I
pmin.
I
bmax.
Bias output current
I
bmin. 1
I
bmin. 2
Supply current
Input voltage
Rise time
Fall time
I
DD* 1
I
SS
V
IH
V
IL
t
r* 2
t
f* 2
3
3
V
Ib1
= 0, V
Ib2
– 5V, I
P
=100mA
Test circuit
1
1
2
2
2
2
2
Condition
V
IN
= 2.0V, V
Ib2
= – 5V
V
IN
= 0.4V, V
Ib2
= – 5V
I
P
= 0, V
Ib1
= 5V, V
Ib2
= 0
I
P
= 0, V
Ib1
= 0, V
Ib2
= 0
I
P
= 0, V
Ib1
= 5V, V
Ib2
= – 5V
V
Ib1
= 5V, V
Ib2
= – 5V, V
IN
= 0.4V
I
P
= 0
2.5
0.4
7
5
80
Min
100
Typ
120
1
100
1
0.05
35
25
5
0.1
55
40
5
Max
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
ns
ns
Note : Following condition is applied unless otherwise specified: V
DD
= 5V, V
SS
= – 5V, V
Ib1
= 0V, V
Ib2
= 0V
Set the supply current of constant current source to I
P
=120mA and load resistance to R
L
=10Ω
1.3typ.
0.5
GaAs MMICs
s
Block Diagram
GN8061
INSIDE GN8061
V
DD
V
IN
OUTSIDE GN8061
+5V
LASER DIODE
OUT
V
SS
V
SS
V
DD
V
DD
V
Ib1
(0 to 5V)
V
SS
V
Ib2
(–5 to 0V)
V
SS
V
IP
V
SS
from CONTROL
CIRCUIT
s
Caution for Handling
1) The recommended V
IN
voltage is 2.5 to 3V for [H] and
0 to 0.4V for [L].
2) Do not apply V
IN
while the power supply is OFF.
3) For the current source to be connected to the V
IP
pin,
use a Si bipolar transistor as shown in the circuit dia-
gram.
(Example: 2SD874)
To connect a resistor to the emitter or collector, use a
resistor of a few ohm. The use of higher resistor may
cause large change in the voltage at the V
IP
pin, and
may make the output waveform distortion. (See the pulse
output current control example).
To use another current control circuit, set so that the V
IP
pin voltage becomes around 2V.
4) When mounting, minimize the connection distance be-
tween the semiconductor laser and IC, and use the chip
parts (C, R) of less parasitic effects.
5) Attention to damage by the power surge (see the ex-
ample connection of the pin protection circuit).
During handling, take care to ground the human body
and solder iron tip.
6) The current value of the current source connected to the
V
IP
pin should be zero to protect the semiconductor la-
ser when the power supply is turned ON and OFF.
When the power supply is ON, make V
SS
to rise earlier
than V
DD
. When the power supply is OFF, make V
DD
to
fall earlier than V
SS
. When V
DD
= 5V, V
SS
= 0 even
transitionary, the current of about 30mA flows through
the semiconductor laser.
7) Pay attention to release the heat.
MA3068(V
Z
=6.8V,Cd=85pF,R
Z
=6Ω)
GN8061
100 to 200W
3k to 5kW
GND V
SS
V
Ib1
V
IN
200 to 2kΩ
–5.0V
50Ω
V
Ib2
V
DD
OUT V
IP
5.0V
Connection example of pin protection circuit
GN8061
GND V
SS
V
Ib1
V
IN
V
Ib2
V
DD
OUT V
IP
–
+
I
B
I COLLECTOR
0.22
m
F
5Ω
V
EE
=–5 to 0V
Example of pulse output current control circuit
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