Doc No.
TT4-EA-11564
Revision.
3
Product Standards
Zener Diode
DZ2J3000L
DZ2J3000L
Silicon epitaxial planar type
Unit: mm
For constant voltage / For surge absorption circuit
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1.25
0.35
2
0.13
Marking Symbol: GG or GR
0.5
1
1.7
2.5
0.7
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Panasonic
JEITA
Code
SMini2-F5-B
SC-90A
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Repetitive peak forward current
Total power dissipation
*1
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
Note)
Rating
200
200
8
150
-40 to +85
-55 to +150
Unit
mA
mW
kV
C
C
C
IFRM
PT
ESD
Tj
Topr
Tstg
Internal Connection
2
*1 Mounted on glass epoxy print board ( 45 mm
45 mm
1 mm )
Solder in ( Recommended land pattern )
*2 Test method : IEC61000_4_2
( C = 150 pF, R = 330
,
Contact discharge : 10 times )
1
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Forward voltage
Zener voltage
*1, *2
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
Note)
Conditions
IF = 10 mA
IZ = 2 mA
IZ = 2 mA
IZ = 0.5 mA
VR = 23 V
IZ = 2 mA
Min
28.50
Typ
Max
1.0
31.50
160
160
0.05
Unit
V
V
A
mV/C
*3
VF
VZ
RZ
RZK
IR
SZ
28.7
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1 The temperature must be controlled 25
C
for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25
C).
*2 VZ guaranted 20 ms after current flow
Rank classification
*3 Tj = 25
C
to 150
C
Code
M
0
M
No-rank
29.30
to
30.80 28.50
to
31.50
Marking symbol
GR
GG
Page 1 of 4
Rank
VZ
Established : 2009-10-14
Revised
: 2013-07-16
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semiconductors described in this book
(1)
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–
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