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STGWA40M120DF3

Description
Gate Drivers 6A Single
Categorysemiconductor    Discrete semiconductor   
File Size1001KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STGWA40M120DF3 Overview

Gate Drivers 6A Single

STGWA40M120DF3 Parametric

Parameter NameAttribute value
Product CategoryIGBT Transistors
ManufacturerSTMicroelectronics
RoHSDetails
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage1.85 V
Maximum Gate Emitter Voltage20 V
Continuous Collector Current at 25 C80 A
Pd - Power Dissipation468 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max40 A
Gate-Emitter Leakage Current250 nA
Factory Pack Quantity600
Unit Weight1.340411 oz
STGW40M120DF3
STGWA40M120DF3
Trench gate field-stop IGBT, M series
1200 V, 40 A low loss
Datasheet
-
production data
Features
10 µs of short-circuit withstand time
V
CE(sat)
= 1.85 V (typ.) @ I
C
= 40 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and fast recovery antiparallel diode
Applications
Industrial drives
UPS
Solar
Figure 1.Internal schematic diagram
Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
V
CE(sat)
temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1. Device summary
Order code
STGW40M120DF3
STGWA40M120DF3
Marking
G40M120DF3
G40M120DF3
Package
TO-247
TO-247 long leads
Packaging
Tube
Tube
November 2014
This is information on a product in full production.
DocID026224 Rev 3
1/18
www.st.com
18

STGWA40M120DF3 Related Products

STGWA40M120DF3 STGW40M120DF3
Description Gate Drivers 6A Single Common Mode Chokes / Filters 5000ohms 100uH 150mA CAN-BUS AEC-Q200
Product Category IGBT Transistors IGBT Transistors
Manufacturer STMicroelectronics STMicroelectronics
RoHS Details Details
Technology Si Si
Package / Case TO-247-3 TO-247-3
Mounting Style Through Hole Through Hole
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1200 V 1200 V
Collector-Emitter Saturation Voltage 1.85 V 1.85 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 80 A 80 A
Pd - Power Dissipation 468 W 468 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Packaging Tube Tube
Continuous Collector Current Ic Max 40 A 40 A
Gate-Emitter Leakage Current 250 nA 250 nA
Factory Pack Quantity 600 600
Unit Weight 1.340411 oz 1.340411 oz
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