STGW40M120DF3
STGWA40M120DF3
Trench gate field-stop IGBT, M series
1200 V, 40 A low loss
Datasheet
-
production data
Features
•
10 µs of short-circuit withstand time
•
V
CE(sat)
= 1.85 V (typ.) @ I
C
= 40 A
•
Tight parameters distribution
•
Safer paralleling
•
Low thermal resistance
•
Soft and fast recovery antiparallel diode
Applications
•
Industrial drives
•
UPS
•
Solar
Figure 1.Internal schematic diagram
•
Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
V
CE(sat)
temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1. Device summary
Order code
STGW40M120DF3
STGWA40M120DF3
Marking
G40M120DF3
G40M120DF3
Package
TO-247
TO-247 long leads
Packaging
Tube
Tube
November 2014
This is information on a product in full production.
DocID026224 Rev 3
1/18
www.st.com
18
Contents
STGW40M120DF3, STGWA40M120DF3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1
4.2
TO-247, STGW40M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TO-247 long leads, STGWA40M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CES
I
C
I
C
I
CP(1)
V
GE
I
F
I
F
I
FP(1)
P
TOT
T
STG
T
J
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature
Value
1200
80
40
160
±20
80
40
160
468
- 55 to 150
- 55 to 175
Unit
V
A
A
A
V
A
A
A
W
°C
°C
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
R
thJC
R
thJC
R
thJA
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.32
0.74
50
Unit
°C/W
°C/W
°C/W
DocID026224 Rev 3
3/18
Electrical characteristics
STGW40M120DF3, STGWA40M120DF3
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
V
(BR)CES
Parameter
Collector-emitter
breakdown voltage
(V
GE
= 0)
Test conditions
I
C
= 2 mA
V
GE
= 15 V, I
C
= 40 A
V
CE(sat)
V
GE
= 15 V, I
C
= 40 A,
Collector-emitter saturation
T
J
= 125 °C
voltage
V
GE
= 15 V, I
C
= 40 A
T
J
= 175 °C
I
F
= 40 A
V
F
Forward on-voltage
I
F
= 40 A T
J
= 125 °C
I
F
= 40 A T
J
= 175 °C
V
GE(th)
I
CES
I
GES
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
V
CE
= V
GE
, I
C
= 2 mA
V
CE
= 1200 V
V
GE
= ± 20 V
5
Min.
1200
1.85
2.2
2.3
2.85
2.25
2.1
6
7
25
250
3.95
V
V
V
V
µA
nA
2.3
V
Typ.
Max.
Unit
V
Table 5. Dynamic characteristics
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CC
= 960 V, I
C
=40 A,
V
GE
= 15 V, see
Figure 30
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
Test conditions
Min.
-
-
-
-
-
-
Typ.
2500
275
95
125
15
75
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
4/18
DocID026224 Rev 3
STGW40M120DF3, STGWA40M120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(off)
t
f
E
on(1)
E
off(2)
E
ts
t
d(on)
t
r
(di/dt)
on
t
d(off)
t
f
E
on(1)
E
off(2)
E
ts
t
sc
1.
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Short-circuit withstand time
Test conditions
Min.
-
-
-
Typ.
35
15
2100
140
135
1.5
2.25
3.75
35
18
1800
150
240
2.8
3.45
6.25
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
A/µs
ns
ns
mJ
mJ
mJ
ns
ns
A/µs
ns
ns
mJ
mJ
mJ
µs
V
CE
= 600 V, I
C
= 40 A,
V
GE
= 15 V, R
G
= 10
Ω
see
Figure 29
-
-
-
-
-
-
-
-
V
CE
= 600 V, I
C
= 40 A,
R
G
= 10
Ω,
V
GE
= 15 V,
T
J
= 175 °C, see
Figure 29
-
-
-
-
-
V
CC
≤
600V, V
GE
= 15V,
T
Jstart
= 150°C
10
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
t
rr
Q
rr
I
rrm
dI
rr/
/dt
E
rr
t
rr
Q
rr
I
rrm
dI
rr/
/dt
E
rr
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during t
b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during t
b
Reverse recovery energy
I
F
= 40 A, V
R
= 600 V,
V
GE
= 15 V, T
J
= 175 °C,
see
Figure 29
di/dt = 1000 A/µs
I
F
= 40 A, V
R
= 600 V,
V
GE
= 15 V, see
Figure 29
di/dt = 1000 A/µs
Test conditions
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
355
2575
25
1110
1.12
667
8500
37
450
3.9
Max.
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
A
A/µs
mJ
ns
nC
A
A/µs
mJ
DocID026224 Rev 3
5/18
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