FT5767M datasheet, PDF - EEWORLD Datasheet

FT5767M: DescriptionSILICON DARLINGTON TRANSISTOR ARRAY; CategoryDiscrete semiconductor The transistor; File Size131KB，2 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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FT5767M Overview

SILICON DARLINGTON TRANSISTOR ARRAY

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	IN-LINE, R-PSIP-T12
Contacts	12
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	100 V
Configuration	4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	500
JESD-30 code	R-PSIP-T12
Number of components	4
Number of terminals	12
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power consumption environment	19 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.5 V

	FT5767M	FT5764M
Description	SILICON DARLINGTON TRANSISTOR ARRAY	SILICON DARLINGTON TRANSISTOR ARRAY
Maker	FUJITSU	FUJITSU
package instruction	IN-LINE, R-PSIP-T12	IN-LINE, R-PSIP-T12
Contacts	12	12
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	100 V	100 V
Configuration	4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	COMPLEX
Minimum DC current gain (hFE)	500	500
JESD-30 code	R-PSIP-T12	R-PSIP-T12
Number of components	4	4
Number of terminals	12	12
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN
Maximum power consumption environment	19 W	19 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	1.5 V	1.5 V

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