FMB2227A datasheet, PDF - EEWORLD Datasheet

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FMB2227A: Description500 mA, 30 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size24KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FMB2227A Overview

500 mA, 30 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

FMB2227A Parametric

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	SSOT
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Manufacturer packaging code	6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	30 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	75
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN AND PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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FMB2227A

Discrete Power

Signal Technologies

FMB2227A

Package: SuperSOT-6

Device Marking:

.001

Note: The "

" (dot) signifies Pin 1

Transistor 1 is NPN device,

transistor 2 is PNP device.

NPN & PNP Complementary Dual Transistor

SuperSOT-6 Surface Mount Package

This complementary dual device was designed for use as a medium power amplifier and switch requiring

collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).

Absolute Maximum Ratings

Symbol

CEO

CBO

EBO

STG

θJA

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation @Ta = 25°C*

Storage Temperature Range

Junction Temperature

= 25°C unless otherwise noted

Value

500

0.7

-55 to +150

150

180

Units

°C

°C/W

Thermal Resistance, Junction to Ambient

Electrical Characteristics

Symbol

CEO

CBO

EBO

Parameter

Collector to Emitter Voltage

Collector to Base Voltage

Emitter to Base Voltage

= 25°C unless otherwise noted

Test Conditions

Ic = 10 mA

Ic = 10 uA

Ie = 10 uA

Min

Max

Units

1998 Fairchild Semiconductor Corporation

Page 1 of 2

2227A.lwpPr19&63(Y1)

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