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FJN3303R

Description
NPN Epitaxial Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size34KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FJN3303R Overview

NPN Epitaxial Silicon Transistor

FJN3303R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
FJN3303R
FJN3303R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=22KΩ, R
2
=22KΩ)
• Complement to FJN4303R
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
10
100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
B
R2
Equivalent Circuit
C
R1
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
=10µA, I
E
=0
I
C
=100µA, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=5V, I
C
=100µA
V
CE
=0.3V, I
C
=5mA
15
0.9
22
1
0.5
3.0
29
1.1
250
3.7
56
0.3
V
MHz
pF
V
V
KΩ
Min.
50
50
0.1
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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