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spb18p

Showing 8 Results for spb18p, including SPB18P06P,SPB18P06P, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
SPB18P06P Infineon SIPMOS Power-Transistor Download
SPB18P06P Rochester Electronics 18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Download
SPB18P06P G Infineon mosfet P-CH 60v 18.6A Download
SPB18P06P-G Infineon Inverters Hex Schmitt-Trigger Download
SPB18P06PG Infineon Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 18.7A Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 130mΩ @ 13.2A, 10V Maximum power dissipation ( Ta=25°C): 81.1W Type: P channel P channel, -60V, -18.6A Download
SPB18P06PG VBsemi Electronics Co. Ltd. P-Channel 60-V (D-S) MOSFET Download
SPB18P06PG_12 Infineon SIPMOS® Power-Transistor Download
SPB18P06PGATMA1 Infineon Schottky Diodes u0026 Rectifiers 20A 100V Download
spb18p Related Product Datasheets:
Part Number Datasheet
SPB18P06P-G 、 SPB18P06PGATMA1 Download Datasheet
SPB18P06P G 、 SPB18P06PG Download Datasheet
SPB18P06P Download Datasheet
SPB18P06P Download Datasheet
spb18p Related Products:
Part Number SPB18P06P G SPB18P06PG
Description mosfet P-CH 60v 18.6A Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 18.7A Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 130mΩ @ 13.2A, 10V Maximum power dissipation ( Ta=25°C): 81.1W Type: P channel P channel, -60V, -18.6A

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