Part Number |
Manufacturer |
Description |
Datasheet |
SPB18P06P |
Infineon |
SIPMOS Power-Transistor |
Download
|
SPB18P06P |
Rochester Electronics |
18.7A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN |
Download
|
SPB18P06P G |
Infineon |
mosfet P-CH 60v 18.6A |
Download
|
SPB18P06P-G |
Infineon |
Inverters Hex Schmitt-Trigger |
Download
|
SPB18P06PG |
Infineon |
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 18.7A Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 130mΩ @ 13.2A, 10V Maximum power dissipation ( Ta=25°C): 81.1W Type: P channel P channel, -60V, -18.6A |
Download
|
SPB18P06PG |
VBsemi Electronics Co. Ltd. |
P-Channel 60-V (D-S) MOSFET |
Download
|
SPB18P06PG_12 |
Infineon |
SIPMOS® Power-Transistor |
Download
|
SPB18P06PGATMA1 |
Infineon |
Schottky Diodes u0026 Rectifiers 20A 100V |
Download
|