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TK12A50D5.NDSQ(M

Among 1 related components, TK12A50D5.NDSQ(M have related pdf.
Part Number Manufacturer Description Datasheet
TK12A50D5 Toshiba Semiconductor TRANSISTOR 12 A, 500 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power Download
TK12A50D5.NDSQ(M parameters:

Description

TRANSISTOR 12 A, 500 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power

Parametric
Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)364 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.73 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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