Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
TK12A50D5 | Toshiba Semiconductor | TRANSISTOR 12 A, 500 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power | Download |
TRANSISTOR 12 A, 500 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power
Parameter Name | Attribute value |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
Avalanche Energy Efficiency Rating (Eas) | 364 mJ |
Shell connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (ID) | 12 A |
Maximum drain-source on-resistance | 0.73 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 48 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |