MCP14A0302T-E/KBA datasheet, PDF

MCP14A0301/2

3.0A MOSFET Driver

with Low Threshold Input and Enable

Features

• High Peak Output Current: 3.0A (typical)

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• Low Shoot-Through/Cross-Conduction Current in

Output Stage

• High Capacitive Load Drive Capability:

- 1800 pF in 13 ns (typical)

• Short Delay Times: 15 ns (t

D1

), 18 ns (t

D2

) (typical)

• Low Supply Current: 360 µA (typical)

• Low-Voltage Threshold Input and Enable with

Hysteresis

• Latch-Up Protected: Withstands 500 mA Reverse

Current

• Space-Saving Packages:

- 8-Lead MSOP

- 8-Lead SOIC

- 8-Lead 2 x 2 WDFN

General Description

The MCP14A0301/2 devices are high-speed MOSFET

drivers that are capable of providing up to 3.0A of peak

current while operating from a single 4.5V to 18V

supply. There are two output configurations available;

inverting

(MCP14A0301)

and

noninverting

(MCP14A0302). These devices feature low shoot-

through current, fast rise and fall times, and short

propagation delays, which make them ideal for high

switching frequency applications.

The MCP14A0301/2 family of devices offers enhanced

control with Enable functionality. The active-high

Enable pin can be driven low to drive the output of the

MCP14A0301/2 low, regardless of the status of the

Input pin. An integrated pull-up resistor allows the user

to leave the Enable pin floating for standard operation.

These devices are highly latch-up resistant under any

condition within their power and voltage ratings. They

can accept up to 500 mA of reverse current being

forced back into their outputs without damage or logic

upset. All terminals are fully protected against

electrostatic discharge (ESD) up to 2 kV (HBM) and

200V (MM).

Applications

•

Switch Mode Power Supplies

Pulse Transformer Drive

Line Drivers

Level Translator

Motor and Solenoid Drive

Package Types

MCP14A0301

MSOP/SOIC

V

DD

1

IN 2

EN 3

GND 4

8 V

DD

7 OUT

6 OUT

5 GND

MCP14A0302

MSOP/SOIC

V

DD

1

IN 2

EN 3

GND 4

8 V

DD

7 OUT

6 OUT

5 GND

MCP14A0301

2 x 2 WDFN*

V

DD

1

IN

2

EN

3

GND

4

MCP14A0302

2 x 2 WDFN*

V

DD

1

IN

2

EN

3

GND

4

8

V

DD

EP*

9

7

OUT

6

OUT

5

GND

8

V

DD

EP*

9

7

OUT

6

OUT

5

GND

* Includes Exposed Thermal Pad (EP); see

Table 3-1.



2017 Microchip Technology Inc.

DS20005807A-page 1

MCP14A0301/2

Functional Block Diagram

V

DD

Internal

Pull-Up

Enable

V

REF

GND

V

DD

Input

V

REF

GND

Non-Inverting

Inverting

Output

MCP14A0301

Inverting

MCP14A0302

Non-Inverting

DS20005807A-page 2



2017 Microchip Technology Inc.

MCP14A0301/2

1.0

1.1

ELECTRICAL CHARACTERISTICS

Electrical Specifications

Absolute Maximum Ratings †

V

DD

, Supply Voltage..................................................................................................................................................+20V

V

IN

, Input Voltage ............................................................................................................... (V

DD

+ 0.3V) to (GND – 0.3V)

V

EN

, Enable Voltage........................................................................................................... (V

DD

+ 0.3V) to (GND – 0.3V)

Package Power Dissipation (T

A

= +50°C)

8L MSOP .................................................................................................................................................0.58W

8L SOIC ...................................................................................................................................................0.90W

8L 2 X 2 WDFN ........................................................................................................................................1.63W

ESD protection on all pins ..............................................................................................................................2 kV (HBM)

ESD protection on all pins .............................................................................................................................. 200V (MM)

† Notice:

Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.



2017 Microchip Technology Inc.

DS20005807A-page 3

MCP14A0301/2

TABLE 1-1:

DC CHARACTERISTICS

Sym.

V

IN

V

IH

V

IL

V

HYST(IN)

I

IN

V

EN

V

EH

V

EL

V

HYST(EN)

R

ENBL

I

EN

t

D3

t

D4

Min.

GND – 0.3V

2.0

—

-1

GND – 0.3V

2.0

—

Typ.

—

1.6

1.3

0.3

—

1.6

1.3

0.3

1.5

12

15

18

Max.

V

DD

+ 0.3

—

0.8

—

+1

V

DD

+ 0.3

—

0.8

—

22

25

Units

V

µA

V

MΩ

µA

ns

V

DD

= 18V, ENB = A

GND

V

DD

= 18V, ENB = A

GND

V

DD

= 18V, V

EN

= 5V, see

Figure 4-3,

(Note

1)

V

DD

= 18V, V

EN

= 5V, see

Figure 4-3,

(Note

1)

I

OUT

= 0A

I

OUT

= 0A

I

OUT

= 10 mA, V

DD

= 18V

I

OUT

= 10 mA, V

DD

= 18V

V

DD

= 18V

(Note

1)

Duty cycle



2%, t



300 µs

(Note

1)

V

DD

= 18V, C

L

= 1800 pF, see

Figure 4-1, Figure 4-2

V

DD

= 18V, C

L

= 1800 pF, see

Figure 4-1, Figure 4-2

V

DD

= 18V, V

IN

= 5V, see

Figure 4-1, Figure 4-2

V

DD

= 18V, V

IN

= 5V, see

Figure 4-1, Figure 4-2

0V



V

IN



V

DD

Conditions

Electrical Specifications:

Unless otherwise noted, T

A

= +25°C, with 4.5V



V

DD



18V.

Parameters

Input

Input Voltage Range

Logic ‘1’ High Input Voltage

Logic ‘0’ Low Input Voltage

Input Voltage Hysteresis

Input Current

Enable

Enable Voltage Range

Logic ‘1’ High Enable Voltage

Logic ‘0’ Low Enable Voltage

Enable Voltage Hysteresis

Enable Pin Pull-Up Resistance

Enable Input Current

Propagation Delay

Output

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Peak Output Current

Latch-Up Protection Withstand

Reverse Current

Switching Time (Note

1)

Rise Time

Fall Time

Delay Time

t

R

t

F

t

D1

t

D2

Power Supply

Supply Voltage

V

DD

I

DD

Power Supply Current

I

DD

I

DD

I

DD

Note 1:

4.5

—

360

18

580

V

µA

V

IN

= 3V, V

EN

= 3V

V

IN

= 0V, V

EN

= 3V

V

IN

= 3V, V

EN

= 0V

V

IN

= 0V, V

EN

= 0V

—

13

12

15

18

17

22

25

ns

V

OH

V

OL

R

OH

R

OL

I

PK

I

REV

V

DD

– 0.025

—

0.5

—

2.2

1.5

3.0

—

0.025

3.3

2.3

—

V

Ω

A

Tested during characterization, not production tested.

DS20005807A-page 4



2017 Microchip Technology Inc.

MCP14A0301/2

TABLE 1-2:

DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)

Sym.

V

IN

V

IH

V

IL

V

HYST(IN)

I

IN

V

EN

V

EH

V

EL

V

HYST(EN)

I

EN

t

D3

t

D4

Min.

GND – 0.3V

2.0

—

–10

GND – 0.3V

2.0

—

Typ.

—

1.6

1.3

0.3

—

1.6

1.3

0.3

12

20

24

Max.

V

DD

+ 0.3

—

0.8

—

+10

V

DD

+ 0.3

—

0.8

—

27

31

Units

V

µA

V

µA

ns

V

DD

= 18V, ENB = A

GND

V

DD

= 18V, V

EN

= 5V, T

A

= +125°C,

see

Figure 4-3

V

DD

= 18V, V

EN

= 5V, T

A

= +125°C,

see

Figure 4-3

DC Test

I

OUT

= 10 mA, V

DD

= 18V

I

OUT

= 10 mA, V

DD

= 18V

0V



V

IN



V

DD

Conditions

Electrical Specifications:

Unless otherwise indicated, over the operating range with 4.5V



V

DD



18V.

Parameters

Input

Input Voltage Range

Logic ‘1’ High Input Voltage

Logic ‘0’ Low Input Voltage

Input Voltage Hysteresis

Input Current

Enable

Enable Voltage Range

Logic ‘1’ High Enable Voltage

Logic ‘0’ Low Enable Voltage

Enable Voltage Hysteresis

Enable Input Current

Propagation Delay

Output

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Note 1:

V

OH

V

OL

R

OH

R

OL

V

DD

–

0.025

—

0.025

4.1

3.3

V

Ω

Tested during characterization, not production tested.



2017 Microchip Technology Inc.

DS20005807A-page 5

Parameter Name	Attribute value
category	semiconductor;Multi-channel IC (PMIC)
Maker	Microchip
series	-
Package	Tape and Reel (TR) Cut Tape (CT)
Driver configuration	High pressure side or low pressure side
Channel type	single path
Number of drives	1
Gate type	IGBT
Voltage - Power supply	4.5V ~ 18V
Logic voltage - VIL, VIH	0.8V，2V
Current - Peak Output (Sink, Source)	3A，3A
input type	Inverting, non-inverting
Rise/Fall Time (Typical)	13ns，12ns
Operating temperature	-40°C ~ 125°C（TA）
Installation type	Surface mount, wettable flanks
Package/casing	8-WFDFN Exposed Pad
Supplier device packaging	8-WDFN（2x2）
Basic product number	MCP14A0302

	MCP14A0302T-E/KBA	MCP14A0302T-E/MS
Description	High Side or Low Side Gate Driver IC Inverting, Non-Inverting 8-WDFN (2x2)	High-side or low-side gate driver IC inverting, non-inverting 8-MSOP
Maker	Microchip	Microchip
Package	Tape and Reel (TR) Cut Tape (CT)	Tape and Reel (TR) Cut Tape (CT)
Driver configuration	High pressure side or low pressure side	High pressure side or low pressure side
Channel type	single path	single path
Number of drives	1	1
Gate type	IGBT	IGBT
Voltage - Power supply	4.5V ~ 18V	4.5V ~ 18V
Logic voltage - VIL, VIH	0.8V，2V	0.8V，2V
Current - Peak Output (Sink, Source)	3A，3A	3A，3A
input type	Inverting, non-inverting	Inverting, non-inverting
Rise/Fall Time (Typical)	13ns，12ns	13ns，12ns
Operating temperature	-40°C ~ 125°C（TA）	-40°C ~ 125°C（TA）
Installation type	Surface mount, wettable flanks	surface mount type
Package/casing	8-WFDFN Exposed Pad	8-TSSOP, 8-MSOP (0.118", 3.00mm wide)
Supplier device packaging	8-WDFN（2x2）	8-MSOP
Basic product number	MCP14A0302	MCP14A0302

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