Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Maker | Vishay(威世) |
Parts packaging code | SOT |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Contacts | 8 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 20 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 12.3 A |
Maximum drain-source on-resistance | 0.0115 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G8 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 40 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Pure Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |