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SI4396DY-T1-GE3

Among 1 related components, SI4396DY-T1-GE3 have related pdf.
Part Number Manufacturer Description Datasheet
SI4396DY-T1-GE3 Vishay MOSFET 30V 16A 5.4W 11.5mohm @ 10V Download
SI4396DY-T1-GE3 parameters:

Description

MOSFET 30V 16A 5.4W 11.5mohm @ 10V

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay(威世)
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)20 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)12.3 A
Maximum drain-source on-resistance0.0115 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal surfacePure Matte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

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