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IS61DDB22M18A-250M3L

Among 4 related components, IS61DDB22M18A-250M3L have related pdf.
Part Number Manufacturer Description Datasheet
IS61DDB22M18A-250M3L All Sensors sram 36mb 250mhz 2mx18 ddr-II sync sram Download
IS61DDB22M18A-250M3L ISSI(Integrated Silicon Solution Inc.) SRAM 36Mb 250Mhz 2Mx18 DDR-II Sync SRAM Download
IS61DDB22M18A-250M3L Integrated Silicon Solution ( ISSI ) DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Download
IS61DDB22M18A-250M3LI Integrated Silicon Solution ( ISSI ) DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Download
IS61DDB22M18A-250M3L parameters:

Description

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompli
ECCN code3A991.B.2.A
Factory Lead Time10 weeks
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density37748736 bi
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width15 mm

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