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IS61DDB22M18A-250M3LI

Description
DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
Categorystorage    storage   
File Size453KB,29 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS61DDB22M18A-250M3LI Overview

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

IS61DDB22M18A-250M3LI Parametric

Parameter NameAttribute value
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompli
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bi
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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