IS61DDB22M18A-250M3L datasheet, PDF

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IS61DDB22M18A-250M3L: DescriptionDDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165; Categorystorage storage; File Size460KB，29 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS61DDB22M18A-250M3L Overview

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

IS61DDB22M18A-250M3L Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compli
ECCN code	3A991.B.2.A
Factory Lead Time	10 weeks
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	17 mm
memory density	37748736 bi
Memory IC Type	DDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	1.89 V
Minimum supply voltage (Vsup)	1.71 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	15 mm

IS61DDB22M18A-250M3L Related Products

	IS61DDB22M18A-250M3L	IS61DDB21M36A-250M3L	IS61DDB22M18A-250B4LI
Description	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165	DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
Is it Rohs certified?	conform to	conform to	conform to
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA	BGA	BGA
package instruction	LBGA,	LBGA,	LBGA,
Contacts	165	165	165
Reach Compliance Code	compli	compliant	compli
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Factory Lead Time	10 weeks	10 weeks	10 weeks
Maximum access time	0.45 ns	0.45 ns	0.45 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
length	17 mm	17 mm	15 mm
memory density	37748736 bi	37748736 bit	37748736 bi
Memory IC Type	DDR SRAM	DDR SRAM	DDR SRAM
memory width	18	36	18
Number of functions	1	1	1
Number of terminals	165	165	165
word count	2097152 words	1048576 words	2097152 words
character code	2000000	1000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C
organize	2MX18	1MX36	2MX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	LBGA	LBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED
Maximum seat height	1.4 mm	1.4 mm	1.4 mm
Maximum supply voltage (Vsup)	1.89 V	1.89 V	1.89 V
Minimum supply voltage (Vsup)	1.71 V	1.71 V	1.71 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL
Terminal form	BALL	BALL	BALL
Terminal pitch	1 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED
width	15 mm	15 mm	13 mm

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