Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
HMC637LP5 | Hittite Microwave(ADI) | GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz | Download |
HMC637LP5 | ADI | Active Bias Controller High Current | Download |
HMC637LP5E | Hittite Microwave(ADI) | GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz | Download |
HMC637LP5E | ADI | IC MMIC MESFET AMP GAAS 32-QFN | Download |
HMC637LP5ETR | Hittite Microwave(ADI) | Wide Band Medium Power Amplifier, 1 Func, GAAS, | Download |
HMC637LP5TR | Hittite Microwave(ADI) | Wide Band Medium Power Amplifier, 1 Func, GAAS, | Download |
Part Number | Datasheet |
---|---|
HMC637LP5ETR 、 HMC637LP5TR | Download Datasheet |
HMC637LP5 、 HMC637LP5E | Download Datasheet |
HMC637LP5E | Download Datasheet |
Part Number | HMC637LP5TR | HMC637LP5ETR |
---|---|---|
Description | Wide Band Medium Power Amplifier, 1 Func, GAAS, | Wide Band Medium Power Amplifier, 1 Func, GAAS, |
Is it Rohs certified? | incompatible | conform to |
Maker | Hittite Microwave(ADI) | Hittite Microwave(ADI) |
package instruction | LCC32,.2SQ,20 | LCC32,.2SQ,20 |
Reach Compliance Code | unknown | unknown |
Installation features | SURFACE MOUNT | SURFACE MOUNT |
Number of functions | 1 | 1 |
Number of terminals | 32 | 32 |
Maximum operating temperature | 85 °C | 85 °C |
Minimum operating temperature | -40 °C | -40 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Encapsulate equivalent code | LCC32,.2SQ,20 | LCC32,.2SQ,20 |
power supply | 12 V | 12 V |
RF/Microwave Device Types | WIDE BAND MEDIUM POWER | WIDE BAND MEDIUM POWER |
Maximum slew rate | 480 mA | 480 mA |
surface mount | YES | YES |
technology | GAAS | GAAS |