HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Features
p1dB output power: +29 dBm
Gain: 13 dB
output ip3: +40 dBm
50 ohm matched input/output
32 lead 5x5mm lead smT package: 25mm
2
Typical Applications
The HmC637lp5(e) wideband pA is ideal for:
• Telecom infrastructure
• microwave radio & VsAT
• military & space
9
Amplifiers - lineAr & power - smT
• Test instrumentation
• fiber optics
Functional Diagram
General Description
The HmC637lp5(e) is a GaAs mmiC mesfeT
Distributed power Amplifier which operates bet-
ween DC and 6 GHz. The amplifier provides 13 dB
of gain, +40 dBm output ip3 and +29 dBm of output
power at 1 dB gain compression while requiring 400
mA from a +12V supply. Gain flatness is excellent at
±0.75 dB from DC - 6 GHz making the HmC637lp5(e)
ideal for ew, eCm, radar and test equipment
applications. The HmC637lp5(e) amplifier i/os
are internally matched to 50 ohms and the 5x5 mm
Qfn package is compatible with high volume smT
assembly equipment.
Electrical Specifications,
T
A
= +25° C, Vdd= +12V, Vgg2= +5V, Idd= 400 mA*
parameter
frequency range
Gain
Gain flatness
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply Current (idd)
320
27
12
min.
Typ.
DC - 6
13
±0.75
0.025
12
15
29
29.5
40
5
400
480
max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Gain vs. Temperature
18
16
Gain & Return Loss
20
10
RESPONSE (dB)
S21
S11
S22
14
12
GAIN (dB)
10
8
6
+25C
+85C
-40C
0
-10
-20
4
2
9
6
8
-30
0
2
4
FREQUENCY (GHz)
6
8
0
0
2
4
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
2
4
FREQUENCY (GHz)
6
8
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
2
4
FREQUENCY (GHz)
6
8
+25C
+85C
-40C
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
0
2
4
FREQUENCY (GHz)
6
8
+25C
+85C
-40C
Noise Figure vs. Temperature
12
+25C
+85C
-40C
10
NOISE FIGURE (dB)
8
6
4
2
0
2
4
FREQUENCY (GHz)
6
8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
Amplifiers - lineAr & power - smT
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Psat vs. Temperature
32
30
28
26
24
22
20
+25C
+85C
-40C
P1dB vs. Temperature
32
30
28
26
24
22
+25C
+85C
-40C
P1dB (dBm)
9
Amplifiers - lineAr & power - smT
20
0
2
4
FREQUENCY (GHz)
6
8
Psat (dBm)
0
2
4
FREQUENCY (GHz)
6
8
Output IP3 vs. Temperature
60
55
50
IP3 (dBm)
45
40
35
30
25
20
0
2
4
FREQUENCY (GHz)
6
8
+25C
+85C
-40C
Gain, Power & Output IP3 vs.
Supply Voltage @ 3 GHz, Fixed Vgg
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
45
40
35
30
25
20
15
10
11.5
Gain
P1dB
Psat
IP3
12
Vdd (V)
12.5
Gain & Return Loss vs. Frequency,
Log Scale
20
Output IP3 vs. Temperature,
Log Scale
60
55
10
RESPONSE (dB)
S21
S11
S22
50
IP3 (dBm)
45
40
35
30
25
+25C
+85C
-40C
0
-10
-20
-30
0.01
0.1
1
10
20
0.01
0.1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
9-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Typical Supply Current vs. Vdd
Vdd (V)
11.5
12.0
12.5
idd (mA)
373
400
425
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
rf input power (rfin)(Vdd = +12 Vdc)
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 87 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
+14 Vdc
-3 to 0 Vdc
+4 to +7 Vdc
+25 dBm
150 °C
5.7 w
11.5 °C/w
-65 to 150 °C
-40 to 85 °C
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
9
Amplifiers - lineAr & power - smT
9-4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC637LP5 / 637LP5E
v02.0709
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Outline Drawing
9
Amplifiers - lineAr & power - smT
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
Package Information
part number
HmC637lp5
HmC637lp5e
package Body material
low stress injection molded plastic
roHs-compliant low stress injection molded plastic
lead finish
sn/pb solder
100% matte sn
msl rating
msl1
msl1
[1]
package marking
[3]
H637
XXXX
H637
XXXX
[2]
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
京公网安备 11010802033920号
EEWORLD
