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2sk2955

Showing 4 Results for 2sk2955, including 2SK2955,2SK2955, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
2SK2955 Hitachi (Renesas ) Silicon N Channel MOS FET High Speed Power Switching Download
2SK2955 Renesas Electronics Corporation Silicon N Channel MOS FET High Speed Power Switching Download
2SK2955 ISC isc N-Channel MOSFET Transistor Download
2SK2955-E Renesas Electronics Corporation Silicon N Channel MOS FET High Speed Power Switching Download
2sk2955 Related Product Datasheets:
Part Number Datasheet
2SK2955 、 2SK2955-E Download Datasheet
2SK2955 Download Datasheet
2sk2955 Related Products:
Part Number 2SK2955-E 2SK2955
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Parts packaging code TO-3P TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 4 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 45 A 45 A
Maximum drain current (ID) 45 A 45 A
Maximum drain-source on-resistance 0.025 Ω 0.025 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e2 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W 100 W
Maximum pulsed drain current (IDM) 180 A 180 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN COPPER TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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