Part Number |
2SK2955-E |
2SK2955 |
Description |
Silicon N Channel MOS FET High Speed Power Switching |
Silicon N Channel MOS FET High Speed Power Switching |
Is it lead-free? |
Lead free |
Contains lead |
Is it Rohs certified? |
conform to |
incompatible |
Parts packaging code |
TO-3P |
TO-3P |
package instruction |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
Contacts |
4 |
3 |
Reach Compliance Code |
compli |
compli |
ECCN code |
EAR99 |
EAR99 |
Shell connection |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
60 V |
60 V |
Maximum drain current (Abs) (ID) |
45 A |
45 A |
Maximum drain current (ID) |
45 A |
45 A |
Maximum drain-source on-resistance |
0.025 Ω |
0.025 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
R-PSFM-T3 |
R-PSFM-T3 |
JESD-609 code |
e2 |
e0 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
150 °C |
150 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
FLANGE MOUNT |
FLANGE MOUNT |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
100 W |
100 W |
Maximum pulsed drain current (IDM) |
180 A |
180 A |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
Terminal surface |
TIN COPPER |
TIN LEAD |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |