Commonly used packaging methods are SL, 4GW-LD, .085CIR
AG503-86G amplifier core information:
The minimum operating temperature of AG503-86G is -40 °C and the maximum operating temperature is 85 °C.
The amplifier gain of AG503-86G can reach: 16.8 dB (Amplifier gain is the logarithm of the ratio of amplifier output power to input power, used to indicate the degree of power amplification. It also refers to the amplification factor of voltage or current. Similarly, decibels is the amplifier gain Unit. ) Its maximum operating frequency is: 6000 MHz, and its minimum operating frequency is: The corresponding maximum input power is 10 dBm. When a single-ended signal is added to the transmission line, the single-ended impedance felt by the signal on AG503-86G is 50 Ω . (The characteristic impedance of AG503-86G is 50 Ω)
The range of its power supply is: 6 V.
Related dimensions of AG503-86G:
AG503-86G has 4 terminals.
AG503-86G amplifier other information:
AG503-86G does not comply with Rohs certification. The corresponding JESD-609 code is: e3. AG503-86G packaging materials are mostly PLASTIC/EPOXY.
Commonly used packaging methods are SL, 4GW-LD, .085CIR
AG503-86G amplifier core information:
The minimum operating temperature of AG503-86G is -40 °C and the maximum operating temperature is 85 °C.
The amplifier gain of AG503-86G can reach: 16.8 dB (Amplifier gain is the logarithm of the ratio of amplifier output power to input power, used to indicate the degree of power amplification. It also refers to the amplification factor of voltage or current. Similarly, decibels is the amplifier gain Unit. ) Its maximum operating frequency is: 6000 MHz, and its minimum operating frequency is: The corresponding maximum input power is 10 dBm. When a single-ended signal is added to the transmission line, the single-ended impedance felt by the signal on AG503-86G is 50 Ω . (The characteristic impedance of AG503-86G is 50 Ω)
The range of its power supply is: 6 V.
Related dimensions of AG503-86G:
AG503-86G has 4 terminals.
AG503-86G amplifier other information:
AG503-86G does not comply with Rohs certification. The corresponding JESD-609 code is: e3. AG503-86G packaging materials are mostly PLASTIC/EPOXY.
The AG503-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG503-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
GND
4
RF In
1
3
RF Out
2
GND
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output IP3
(2)
Output IP2
Output P1dB
Noise Figure
Test Frequency
Gain
Output IP3
(2)
Output P1dB
Device Voltage
Device Current
Typical Performance
(1)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
Typ
900
20.2
20
20
+28.8
+37
+15.9
2.9
1900
17.8
+27.8
+14.6
5
45
Max
6000
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
20.8
-20
-21
+16.0
+28.9
2.9
Typical
900
20.2
-20
-20
+15.9
+28.8
2.9
1900
17.8
-18
-15
+14.6
+27.8
3.1
2140
17.6
-18
-13
+14.3
+27.4
3.1
16.8
18.8
1. Test conditions: T = 25º C, Supply Voltage = +6 V, R
bias
= 22.1
Ω,
50
Ω
System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
-40 to +85
°C
-55 to +125
°C
+5.8 V
+10 dBm
+250° C
Ordering Information
Part No.
AG503-86*
AG503-86G
AG503-86PCB
Rating
Description
InGaP HBT Gain Block
(lead-tin SOT-86 Pkg)
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Pkg)
700 – 2400 MHz Fully Assembled Eval. Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage
* This package is being phased out in favor of the green package type which is backward compatible for
existing designs.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 6 July 2005
AG503-86
InGaP HBT Gain Block
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
21.0
-20
-18
+16.2
+28.9
2.9
500
20.8
-20
-21
+16.0
+28.9
2.9
900
20.2
-20
-20
+15.9
+28.8
2.9
1900
17.8
-18
-15
+14.6
+27.8
3.1
2140
17.6
-18
-13
+14.3
+27.4
3.1
The Communications Edge
TM
Product Information
Typical Device RF Performance
Supply Bias = 6 V, R
bias
= 22.1
Ω,
I
cc
= 45 mA
2400
17.2
-18
-13
+14.0
+27.0
3.2
3500
15.3
-20
-16
+11.0
+24.4
5800
11.8
-20
-14
1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1
Ω,
Icc = 45 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
22
20
Return Loss
0
-10
-20
-30
S11
S22
Device Current (mA)
I-V Curve
80
60
40
20
0
3.0
S11, S22 (dB)
G a in (d B )
18
16
14
-40 C
12
0
1
2
Frequency (GHz)
3
4
+25 C
+85 C
Optimal operating point
-40
0
1
2
3
4
5
6
3.4
3.8
4.2
4.6
5.0
5.4
Frequency (GHz)
Output IP2 vs. Frequency
Device Voltage (V)
Noise Figure vs. Frequency
Output IP3 vs. Frequency
35
30
25
20
-40 C
+25 C
+85 C
45
40
NF (dB)
-40 C
+25 C
+85 C
5
4
3
2
1
-40 C
+25 C
+85 C
OIP3 (dBm)
OIP2 (dBm)
35
30
25
15
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
0
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
Frequency (MHz)
Frequency (GHz)
P1dB vs. Frequency
Output Power / Gain vs. Input Power
20
18
G a in (d B )
16
14
Output Power
12
10
Gain
frequency = 900 MHz
Output Power / Gain vs. Input Power
20
O u tp u t P ow e r (d B m )
G a in (d B )
16
12
8
4
0
18
16
14
12
10
8
-12
-8
-4
0
Input Power (dBm)
4
8
Output Power
Gain
frequency = 2000 MHz
20
15
10
5
-40 C
+25 C
+85 C
20
O u tp u t P ow e r (d B m )
16
12
8
4
0
P1dB (dBm)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
-12
-8
-4
0
Input Power (dBm)
4
8
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 6 July 2005
AG503-86
InGaP HBT Gain Block
Gain vs. Frequency
22
20
18
16
14
-40 C
12
0
1
2
Frequency (GHz)
3
4
+25 C
+85 C
Output IP3 vs. Frequency
The Communications Edge
TM
Product Information
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 44
Ω,
Icc = 45 mA
Output IP2 vs. Frequency
35
30
25
20
-40 C
+25 C
+85 C
45
40
35
30
-40 C
+25 C
+85 C
OIP3 (dBm)
15
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
P1dB vs. Frequency
OIP2 (dBm)
G a in (d B )
25
0
200
400
600
800
1000
Frequency (MHz)
Noise Figure vs. Frequency
20
15
NF (dB)
-40 C
+25 C
+85 C
5
4
3
2
1
-40 C
+25 C
+85 C
P1dB (dBm)
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
0
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Vcc
Icc = 45 mA
Application Circuit
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
AG503-86
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Ref. Desig.
L1
C1, C2
C3
C4
R1
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
Size
0603
0603
0603
0805
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018
μF
chip capacitor
Do Not Place
22.1
Ω
1% tolerance
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
6V
22.2 ohms
0603
7V
44.4 ohms
0805
8V
67 ohms
1206
9V
89 ohms
1210
10 V
111 ohms
1210
12 V
156 ohms
2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 6 July 2005
AG503-86
InGaP HBT Gain Block
The Communications Edge
TM
Product Information
Typical Device Data
S-Parameters (V
device
= +5.0 V, I
CC
= 45 mA, T = 25° C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
-24.44
-24.44
-21.37
-22.01
-23.48
-24.31
-24.81
-24.63
-22.62
-18.50
-19.01
-19.23
-19.99
-22.01
-25.77
-27.43
-24.77
-22.30
-20.80
-20.29
-21.16
-23.80
-24.99
-21.56
-20.00
-177.67
164.30
149.15
133.61
111.38
89.71
65.41
32.83
10.74
0.24
-8.16
-16.02
-20.82
-18.24
-3.66
33.78
70.07
85.66
92.93
102.02
110.99
134.38
172.16
-154.26
-137.16
21.67
21.57
21.36
21.04
20.63
20.18
19.65
19.10
18.53
17.98
17.60
17.14
16.72
16.29
15.88
15.42
14.98
14.56
14.09
13.71
13.39
13.03
12.69
12.47
12.19
177.30
167.09
154.27
142.18
130.59
119.26
108.86
98.96
89.57
81.21
74.79
66.16
58.14
50.34
42.45
34.38
26.44
18.90
11.59
4.12
-2.78
-9.23
-15.58
-22.34
-28.69
-24.34
-24.61
-24.79
-24.91
-24.93
-24.48
-24.13
-24.32
-23.97
-23.53
-23.67
-23.22
-22.51
-22.50
-22.27
-21.77
-21.57
-20.99
-20.84
-20.73
-20.46
-20.21
-19.97
-19.50
-19.34
2.97
2.48
-1.41
-0.76
-5.89
-3.85
-2.88
-3.45
-4.87
-6.73
-9.19
-10.70
-11.38
-13.34
-15.84
-19.50
-22.70
-25.24
-28.83
-32.26
-36.07
-39.85
-41.39
-44.82
-49.46
-18.52
-18.86
-21.64
-20.64
-19.50
-17.89
-16.59
-15.53
-14.85
-13.12
-13.52
-14.01
-14.84
-15.91
-16.13
-15.28
-14.12
-12.66
-11.77
-11.62
-11.55
-12.15
-12.91
-14.07
-14.74
-7.18
-18.94
-48.63
-72.70
-92.91
-109.14
-119.24
-126.61
-133.04
-125.47
-132.23
-142.18
-155.04
-172.38
164.34
139.30
122.06
109.74
102.11
97.84
96.81
98.05
101.46
107.85
111.53
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 6 July 2005
AG503-86
InGaP HBT Gain Block
The Communications Edge
TM
Product Information
AG503-86 (SOT-86 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an “H”
designator followed by a two-digit numeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 0
Passes at 150 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class II
Passes at 250 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Land Pattern
MSL Rating: Level 1
Standard:
JEDEC Standard J-STD-020A
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25 mm
(.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance, Rth
(1)
Junction Temperature, Tjc
(2)
Rating
-40 to +85
°C
257
°C/W
143
°C
MTTF vs. GND Lead Temperature
1000
MTTF (million hrs)
100
10
1. The thermal resistance is referenced from the hottest part
of the junction to the ground lead (pin 2 or 4).
2. This corresponds to the typical biasing condition of
+5.03V, 45 mA at an 85
°C
case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177
°C.
1
60
70
80
90
100
110
120
Ground Lead Temperature (°C)
Specifications and information are subject to change without notice
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