UF2G_R1_10001 datasheet, PDF - EEWORLD Datasheet

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UF2G_R1_10001: DescriptionRectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size156KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF2G_R1_10001 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

UF2G_R1_10001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-C2
Reach Compliance Code	compli
ECCN code	EAR99
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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UF2A~UF2J

SURFACE MOUNT ULTRAFAST RECTIFIER

VOLTAGE

50 to 600 Volts

CURRENT

2 Amperes

FEATURES

• For surface mounted applications

• Low profile package

• Built-in strain relief

• Easy pick and place

• Ultrafast recovery times for high efficiency

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• Glass passivated junction

• Lead free in comply with EU RoHS 2002/95/EC directives

0.155(3.94)

0.130(3.30)

0.083(2.11)

0.075(1.91)

0.185(4.70)

0.160(4.06)

0.012(0.305)

0.006(0.152)

0.096(2.44)

0.083(2.13)

0.050(1.27)

0.030(0.76)

0.220(5.59)

0.200(5.08)

MECHANICAL DATA

•

Case: JEDEC DO-214AA molded plastic

Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

Polarity: Indicated by cathode band

Standard packaging: 12mm tape (EIA-481)

Weight: 0.0032 ounce, 0.092 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

PA RA ME TE R

Ma xi m um Re c urr e nt P e a k Re ve r s e Vo lta g e

Ma xi m um RMS Vo lta g e

Ma xi m um D C B lo c k i ng Vo lta g e

Ma xi m um A ve r a g e F o r wa rd C ur re nt a t T

=9 0

P e a k F o r wa rd S urg e C urr e nt : 8 .3 ms s i ng le ha lf s i ne - wa ve

s up e ri mp o s e d o n ra te d lo a d (J E D E C me tho d )

Ma xi m um F o r wa rd Vo lta g e a t 2 A

=2 5

=1 2 5

S YMB OL

RRM

RMS

F (AV )

F S M

S TG

UF 2 A

UF 2 B

100

UF 2 D

200

140

200

UF 2 G

400

280

400

UF 2 J

600

420

600

UNITS

200

-5 5 to +1 5 0

1 .3

1 .7

μA

Ma xi m um D C Re ve rs e C urr e nt a t Ra te d D C B lo c k i ng Vo lta g e

Typ i c a l J unc ti o n C a p a c i ta nc e ( No te 2 )

Typ i c a l The rma l Re s i s ta nc e (No te 3 )

Ma xi m um Re ve rs e Re c o ve ry Ti me (No te 1 )

Op e ra ti ng J unc ti o n a nd S to r a g e Te mp e r a ture Ra ng e

C / W

100

NOTES:1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and applied V

= 4.0 volts.

3. 8.0 mm

( .013mm thick ) land areas.

March 14,2012-REV.04

PAGE . 1

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