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TPC5663NND03

Description
NPN transistor
CategoryDiscrete semiconductor   
File Size570KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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TPC5663NND03 Overview

NPN transistor

Features

Product Name: NPN Transistor


Product model: TPC5663NND03



Product parameters:


Pcm (maximum dissipated power): 150mW


Ic (collector current): 500mA


BVcbo (Collector-Base Breakdown Voltage): 15V


BVceo (Collector-Emitter Breakdown Voltage): 12V


BVebo (emitter-base breakdown voltage): 6V


hFE (current gain): Min: 270, Max: 680


VCE (sat) saturation voltage drop: 0.25V


fT (transition frequency): 320+MHz



Package: WBFBP-03B

TPC5663NND03 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C
TPC5663NND03
TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Collector saturation voltage is low.
V
CE
(sat)
≤250mA
At I
C
=200mA / I
B
=10mA
APPLICATION
For switching For muting
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: BX
C
B
C
1. BASE
2. EMITTER
3. COLLECTOR
E
BACK
E
B
BX
B E
MAXIMUM RATINGS(T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
15
12
6
0.5
0.15
150
-55~150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat
)
Test conditions
I
C
= 10μA, I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 10μA, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=10mA
I
C
=200mA, I
B
=10mA
V
CE
=2V, I
C
=10mA,
f=100MHz
V
CB
=10V, I
E
=0,f=1MHz
320
7.5
270
Min
15
12
6
0.1
0.1
680
0.25
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
f
T
C
ob
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