TK3904NND03 datasheet, PDF - EEWORLD Datasheet

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TK3904NND03: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size639KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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TK3904NND03 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: TK3904NND03

Product parameters:

Pcm (maximum dissipated power): 150mW

Ic (collector current): 200mA

BVcbo (Collector-Base Breakdown Voltage): 60V

BVceo (Collector-Emitter Breakdown Voltage): 40V

BVebo (emitter-base breakdown voltage): 6V

hFE (current gain): Min: 100, Max: 300

VCE (sat) saturation voltage drop: 0.3V

fT (transition frequency): 300MHz

Package: WBFBP-03B

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

TK3904NND03

TRANSISTOR

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

DESCRIPTION

NPN Epitaxial Silicon Transistor

FEATURES

Epitaxial Planar Die Construction

Complementary PNP Type Available (TK3906NND03)

Ultra-Small Surface Mount Package

Also Available in Lead Free Version

APPLICATION

General Purpose Amplifier, switching

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING:1N

TOP

1. BASE

2. EMITTER

3. COLLECTOR

BACK

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction Temperature

Storage Temperature

Value

0.2

0.15

150

-55~150

Unit

MAXIMUM RATINGS(T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

stg

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CEX

EBO

FE(1)

FE(2)

DC current gain

FE(3)

FE(4)

FE(5)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

CE(sat)1

CE(sat)2

BE(sat)1

BE(sat)2

Test conditions

=10μA,I

=1mA,I

=10μA,I

=30V,V

EB(off)

=3V

=5V,I

=1V,I

=0.1mA

=1V,I

=1mA

=1V,I

=10mA

=1V,I

=50mA

=1V,I

=100mA

=10mA,I

=1mA

=50mA,I

=5mA

=10mA,I

=1mA

=50mA,I

=5mA

=20V,I

=10mA,f=100MHz

300

0.65

100

0.2

0.3

0.85

0.95

MHz

300

Min

0.05

0.1

Typ

Max

Unit

μA

A,May,2011

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