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SS3030-HE

Description
3 A, 20 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size70KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SS3030-HE Overview

3 A, 20 V, SILICON, RECTIFIER DIODE

SS3030-HE Preview

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SS3020HE SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
20~200 Volts
CURRENT
3.0 Amperes
0.046(1.15)
Unit:inch(mm)
0.033(0.85)
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications
• In compliance with EU RoHS 2002/95/EC directives
0.075(1.90)
0.067(1.70)
0.114(2.90)
0.106(2.70)
0.012(0.30)
0.007(0.20)
0.040(1.00)
0.031(0.80)
0.154(3.90)
0.137(3.50)
MECHANICAL DATA
Case: SOD-123HE molded plastic
Terminals:Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Color band cathode
0.091(2.30)
0.074(1.90)
0.048(1.20)
0.031(0.80)
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
PA RA ME TE R
Ma rk i ng C o de
Ma xi mum Re current P ea k Re verse Voltag e
Ma xi mum RMS Voltage
Ma xi mum D C B loc k i ng Voltag e
Ma xi mum A verage F orwa rd C urre nt a t
T
L
=75
O
C
P eak Forward S urge C urrent : 8.3ms si ng le
ha lf si ne-wave superi mposed on rated
loa d(J E D E C method)
Ma xi mum F orward Voltag e at 3.0A ( Note 1)
Ma xi mum D C Revers e C urrent T
J
=25
O
C
Typi cal Thermal Re si sta nce ( Note 2)
Operati ng Juncti on Temperature Range
S tora ge Tempe rature Range
S YMB OL
S S 3 020- S S 30 30- S S 3 040- S S 3060 - S S 3 0100- S S 30150- S S 3 0200-
UNITS
HE
HE
HE
HE
HE
HE
HE
EA
EB
30
21
30
EC
40
28
40
ED
60
42
60
3.0
80
0.52
160
0.65
100
20
10 5
-55 to +125
-55 to +125
0 .8
20
0 .86
20
0.86
20
O
EF
1 00
70
1 00
EH
1 50
1 05
1 50
EJ
200
1 40
200
V
V
V
A
A
V
μA
C / W
O
V
RRM
V
RMS
V
DC
I
I
F (AV )
20
14
20
FSM
V
F
I
R
R
θJL
R
θJA
T
J
T
S TG
C
C
O
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8.0mm
2
(.013mm thick) copper pad areas.
REV.0.8-JAN.08.2010
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