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SR2150

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 2A Forward voltage drop (Vf): 850mV @ 2A 150V, 2A, VF=0.85V@2A
CategoryDiscrete semiconductor    Schottky diode   
File Size585KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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SR2150 Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 2A Forward voltage drop (Vf): 850mV @ 2A 150V, 2A, VF=0.85V@2A

SR2150 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)150V
Average rectified current (Io)2A
Forward voltage drop (Vf)850mV @ 2A

SR2150 Preview

Download Datasheet
SR220 THRU SR2200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
DO-15
Forward Current - 2.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.140 (3.6)
0.104(2.6)
DIA.
0.300(7.6)
0.230(5.8)
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.014
ounce, 0.40 grams
0.034 (0.86)
0.028 (0.70)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SR SR
220 230
SR
240
SR SR
250 260
SR SR
270 280
SR
290
SR SR SR
2A0 2150 2200
UNITS
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
70
49
70
2.0
80
56
80
90
63
90
100 150 200 VOLTS
70 105 140 VOLTS
100 100 200 VOLTS
Amp
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
220
50.0
-50 to +125
0.55
10.0
0.70
0.5
60.0
0.85
5.0
80
-50 to +150
-50 to +150
0.95
0.2
2.0
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375
(9.5mm)lead length,P.C.B. mounted
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