SOD1H3 U3 datasheet, PDF - EEWORLD Datasheet

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SOD1H3 U3: DescriptionDC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 1V @ 1A; CategoryDiscrete semiconductor High efficiency diode; File Size488KB，2 Pages; ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.; Websitehttp://www.microdiode.com/; Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.

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SOD1H3 U3 Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 1V @ 1A

SOD1H3 U3 Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	200V
Average rectified current (Io)	1A
Forward voltage drop (Vf)	1V @ 1A

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SOD1H1 THRU SOD1H8

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.0 Ampere

SOD-123FL

Cathode Band

Top View

FEATURES

Glass passivated device

Ideal for surface mouted applications

Low reverse leakage

Metallurgically bonded construction

High temperature soldering guaranteed:

250 C/10 seconds,0.375

”

(9.5mm) lead length,

5 lbs. (2.3kg) tension

2.8

0.1

1.3± 0.15

0.10-0.30

0.6

0.25

１．０±

0.2

1.8± 0.1

MECHANICAL DATA

Case:

JEDEC SOD-123FL molded plastic body over passivated chip

Terminals:

Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:0.0007

ounce, 0.02 grams

3.7

0.2

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

MDD Catalog Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at1.0A

Maximum DC reverse current

=25 C

at rated DC blocking voltage

=100 C

Maximum reverse recovery time (NOTE 1)

RRM

RMS

(AV)

SOD1H1 SOD1H2 SOD1H3

SOD1H4 SOD1H5 SOD1H6 SOD1H7 SOD1H8

UNITS

VOLTS

Amp

100

200

140

200

300

210

300

1.0

400

280

400

600

420

600

800

560

800

1000

700

1000

FSM

trr

1.0

25.0

1.3

5.0

100.0

180

-50 to +150

1.7

Amps

Volts

K/W

Typical thermal resistance

Operating junction and storage temperature range T

STG

Note:

1.Measured with IF=0.5A, IR=1A, Irr=0.25A.

２０１４－０３　０１版

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