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SOD1F4 F4

Description
Reverse recovery time (trr): 150ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A
CategoryDiscrete semiconductor    Fast recovery diode   
File Size606KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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SOD1F4 F4 Overview

Reverse recovery time (trr): 150ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A

SOD1F4 F4 Parametric

Parameter NameAttribute value
Reverse recovery time (trr)150ns
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)1A
Forward voltage drop (Vf)1.3V @ 1A

SOD1F4 F4 Preview

Download Datasheet
SOD1F1 THRU SOD1F7
SURFACE MOUNT FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
SOD-123FL
Cathode Band
Top View
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
2.8
±
0.1
1.
1
± 0.15
0.10-0.30
0.6
±
0.25
1.0±
0.2
1.8± 0.1
MECHANICAL DATA
Case:
JEDEC SOD-123FL molded plastic body over passivated chip
Terminals:
Solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0007
ounce, 0.02 grams
3.7
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SOD1F1 SOD1F2 SOD1F3 SOD1F4 SOD1F5 SOD1F6 SOD1F7
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
A
=65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=25 C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Maximum reverse recovery time (NOTE 2)
Typical junction capacitance (NOTE 3)
UNITS
VOLTS
VOLTS
VOLTS
Amp
F1
F2
F3
F4
F5
F6
F7
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
trr
C
J
150
25.0
1.3
10.0
50.0
250
4
180
-50 to +150
500
Amps
Volts
µ
A
ns
pF
°C/W
C
Typical thermal resistance (NOTE 4)
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
Note:
1.Averaged over any 20ms period.
2.Measured with IF=0.5A, IR=1A, Irr=0.25A.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.Thermal resistance junction to ambient, 6.0 mm2 coppeer pads to each terminal.
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