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SMDJ33CA

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 56.3A Clamping voltage: 53.3V Breakdown voltage (minimum): 36.7V Reverse shutdown voltage (typ.): 33V 3000W 33V Bidirectional
CategoryDiscrete semiconductor    TVS diode   
File Size314KB,5 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
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SMDJ33CA Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 56.3A Clamping voltage: 53.3V Breakdown voltage (minimum): 36.7V Reverse shutdown voltage (typ.): 33V 3000W 33V Bidirectional

SMDJ33CA Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)56.3A
clamping voltage53.3V
Breakdown voltage (minimum value)36.7V
Reverse shutdown voltage (typ)33V

SMDJ33CA Preview

Download Datasheet
SMDJ Series
Transient Voltage Suppressors
SMDJxxA(CA)
ROHS
DESCRIPTION:
TVS diodes can be used in a wide range of applications
which like consumer electronic products, automotive
industries, munitions, telecommunications, aerospace
industries, and intelligent control systems.
SMC
FEATURES:
Glass passivated or planar junction
Excellent clamping capability
Repetition rate (duty cycle): 0.01%
Typical I
R
less than 1μA above 10V.
Low profile package and low inductance
3000W Peak Pulse power capability at 10×1000μs waveform.
Fast response time: typically less than 1.0ps from 0V to V
BR
min.
High temperature soldering: 260℃/10s at terminals.
Symbol
Plastic package has Underwriters Laboratory Flammability 94V-0.
For surface mounted applications in order to optimize board space
ABSOLUTE MAXIMUM RATINGS
(T
A
=25ºC, RH=45%-75%,
unless otherwise noted)
Parameter
Storage temperature range
Operating junction temperature range
Steady state power dissipation at T
L
=75℃
Peak pulse power dissipation on 10/1000μs
waveform
Maximum Instantaneous Forward Voltage at
80A for Unidirectional
Symbol
T
stg
T
j
P
M(AV)
P
PP
V
F
Value
-55 to +150
-55 to +150
8.0
3000
5.0
Unit
W
W
V
1/5
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