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SMCJ75A

Description
反向关断电压(典型值):75V 击穿电压(最小值):83.3V 极性:Unidirectional 箝位电压:121V 峰值脉冲电流(10/1000us):12.4A
CategoryDiscrete semiconductor    TVS diode   
File Size461KB,4 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SMCJ75A Overview

反向关断电压(典型值):75V 击穿电压(最小值):83.3V 极性:Unidirectional 箝位电压:121V 峰值脉冲电流(10/1000us):12.4A

SMCJ75A Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)75V
Breakdown voltage (minimum value)83.3V
polarityUnidirectional
clamping voltage121V
Peak pulse current (10/1000us)12.4A

SMCJ75A Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
MARCH 2008
SMCJ Seires
1500 W Surface Mount Transient Voltage Suppressors
General Description
The SMCJ series from SINO-IC are
designed to protect voltage sensitive
components from high voltage, high energy
transients. They have excellent clamping
capability, high surge capability, fast
response time and cost-effectiveness.
Revision:B
Features
For surface mounted application in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Applications
Communication Systems
Power Supplies
Medical Equipment
Business Machines
Mechanical Data
Case: JESEC DO214AB. Molded plastic over glass
passivated junction
Polarity: Color band denoted positive end
except Bidirectional
(cathode)
Absolute Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Symbol
Value
Uni
ts
Peak Power Dissipation (Note 1.) @T
L
= 25°C, Pulse Width = 1 ms
P
PK
I
PPM
1500
SEE TABLE 1
200
-55 to 150
-55 to 150
W
A
A
°C
°C
Peak pulse current of on 10/1000μs waveform
Peak forward surge Current
Storage Temperature Range
Operating Junction and Storage Temperature Range
Notes:
1. 10 X 1000 us, non–repetitive
I
PSM
T
STG
T
J
, T
STG
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
3. Mounted on 5.0mm2(0.03mm thick) Copper Rads to each terminal
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
),
which should be equal to or greater than the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 1 and derate per Figure 3.
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Test Current
Breakdown Voltage @ I
T
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