SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SEMI8401
Low Capacitance 8 Line EMI Filter with ESD Protection
Revision:B
General Description
This device is an 8 line EMI filter array for wireless
applications. Greater than
−25
dB attenuation is
obtained at frequencies from 800 MHz to 2.2 GHz. It
also offers ESD protection−clamping transients from
static discharges. ESD protection is provided across all
capacitors.
Features
EMI Filtering and ESD Protection
Integration of 40 Discrete Components
Compliance with IEC61000−4−2 (Level 4)
>14 kV (Contact)
DFN Package, 1.6 x 4.0 mm
Moisture Sensitivity Level 1
ESD Ratings:
Machine Model = C
Human Body Model = 3B
This is a Pb−Free Device
Applications
EMI Filtering and ESD Protection for Data Lines
Wireless Phones
Handheld Products
Notebook Computers
LCD Displays
Benefits
Reduces EMI/RFI Emissions on a Data Line
Integrated Solution Offers Cost and Space
Savings
Reduces Parasitic Inductances Which Offer a
More “Ideal” Low Pass Filter Response
Integrated Solution Improves System Reliability
Maximum Ratings
Parameter
ESD Discharge IEC61000−4−2
Steady-State Power per Resistor @ 25
℃
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10
seconds)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the
device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If
these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be
affected.
Electrical Characteristics(T
J
=25℃ unless otherwise noted)
Parameter
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Resistance
Capacitance (Notes 1 and 2)
Cut−Off Frequency (Note 3)
Symbol
V
RWM
V
BR
I
R
R
A
Cd
F
3dB
I
R
=1.0mA
V
RWM
=3.0V
I
R
=20mA
V
R
=2.5v, f =1.0MHz
Above this frequency,
appreciable attenuation occurs
85
100
12
175
6.0
7.0
Test Condition
Min
Typ
Max
5.0
8.0
100
115
Unit
V
V
nA
Ω
Pf
MHz
Contact Discharge
Symbol
V
PP
P
R
Value
Unit
14
328
-40 to 85
-55 to 150
260
kV
mW
℃
℃
℃
T
OP
T
STG
T
L
SEMI8401
1. Measured at 25°C, V
R
=2.5V, f =1.0MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50
Ω
source and 50
Ω
load termination.
Typical Characteristics
Figure 1. Insertion Loss Characteristic
Figure 2. Analog Crosstalk
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
Figure 4. Typical Resistance over Temperature
Package Dimensions
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
MILLIMETERS
MIN
0.80
0.00
0.18
3.10
0.30
0.20
0.20
MAX
1.00
0.05
0.30
3.30
0.50
----
0.40
0.20REP
4.00BSC
1.60BSC
0.50BSC
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SEMI8401
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION b APPLIES TO TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
PCB Design
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